Abstract
A basic technique for manufacturing and processing polycrystalline diamond as a promising material for heatsinks of high-power microwave semiconductor devices is proposed. The fabrication of polycrystalline diamond wafers by chemical vapor deposition is investigated. The choice of a method for fragmenting polycrystalline diamond wafers is considered and a new technique for low-pressure laser/plasma chemical cutting of wafers in a gaseous medium is proposed which consists of growing polycrystalline diamond on preshaped silicon substrates and subsequent silicon etching.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, A. B. Muchnikov, A. K. Ratnikova, and Yu. Yu. Fedorov, “Combined single-crystalline and polycrystalline CVD diamond substratesfor diamond electronics,” Semiconductors 46, 263 (2012).
A. A. Altukhov, A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, V. E. Zemlyakov, K. N. Ziablyuk, A. V. Mitenkin, A. B. Muchnikov, D. B. Radishev, A. K. Ratnikova, and Yu. Yu. Fedorov, “Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond,” Semiconductors 45, 392 (2011).
V. I. Berdnikov, V. P. Podymov, B. M. Egorov, P. P. Maltsev, and G. A. Gurkina, “The method of diamond single crystal synthesis and reactor for its realization,” RF Patent No. 2102542 (1995).
V. I. Berdnikov, V. P. Podymov, and B. M. Egorov, “The method of diamond single crystal synthesis and reactor for its realization,” RF Patent No. 2106437 (1996).
V. I. Berdnikov, V. P. Podymov, P. P. Maltsev, and G. A. Gurkina, “The method of diamond single crystal synthesis and reactor for its realization,” RF Patent No. 2118672 (1996).
N. V. Poboikina, “The use of diamond as a heat sink element: the methods and devices of growing diamond films and plates,” Nano-Mikrosist. Tekh., No. 3, 35–46 (2014).
O. Yu. Kudryashov, I. A. Leont’ev, M. P. Dukhnovsky, Yu. Yu. Fedorov, and A. K. Ratnikova, “A method for preparing articles of polycrystalline diamond,” RF Patent No. 2357001 (2007).
I. A. Glinskiy, S. V. Redkin, M. P. Dukhnovsky, E. N. Kulikov, A. K. Smirnova, Yu. Yu. Fedorov, and A. S. Vedeneev, “Formation of nanocrystalline layers of porous anodic aluminium oxide at a high resistivity silicon substrate for the polycrystalline diamond growth,” Nano-Mikrosist. Tekh., No. 4, 15–20 (2015).
P. P. Maltsev, S. V. Redkin, A. S. Skripnichenko, N. V. Poboikina, M. P. Dukhnovsky, and A. K. Smirnova, “Technology of laser cutting of polycrystalline diamond plates,” Nano-Mikrosist. Tekh., No. 5, 44–48 (2015).
V. V. Aristov, P. P. Maltsev, S. V. Redkin, A. S. Skripnichenko, and V. Yu. Pavlov, “The method of precision laser plasma chemical cutting of plates,” RF Patent No. 2537101 (2013).
K. A. Ivanov, V. A. Kurmachev, and A. L. Filatov, “GaN power microwave transistors on substrates from poly diamond,” Elektron. Tekh., Ser. 2: Poluprovodn. Prib., No. 1, 82–85 (2012).
I. A. Glinskiy, O. A. Ruban, A. N. Aleshin, N. V. Zenchenko, and A. A. Melnikov, “Calculation of thermal regimes of HEMTs based on AlGaN/GaN heterostructure,” Nano-Mikrosist. Tekh., No. 11, 43–48 (2014).
N. V. Zenchenko, O. A. Ruban, A. N. Aleshin, I. A. Glinskiy, and A. A. Melnikov, “Modeling nonstationary thermal regimes of HEMT,” Nano-Mikrosist. Tekh., No. 12, 3–6 (2014).
I. A. Glinskiy and N. V. Zenchenko, “Computer simulation of the heat distribution element for high-power microwave transistors,” Russ. Microelectron. 44, 236 (2015).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © P.P. Maltsev, S.V. Redkin, I.A. Glinskiy, N.V. Poboikina, M.P. Duknovskiy, Yu.Yu. Fedorov, A.K. Smirnova, E.N. Kulikov, S.V. Shcherbakov, I.A. Leontiev, O.Yu. Kudryashov, A.S. Skripnichenko, 2016, published in Rossiiskie Nanotekhnologii, 2016, Vol. 11, Nos. 7–8.
Rights and permissions
About this article
Cite this article
Maltsev, P.P., Redkin, S.V., Glinskiy, I.A. et al. Heatsink diamond nanostructures for microwave semiconductor electronics. Nanotechnol Russia 11, 480–490 (2016). https://doi.org/10.1134/S199507801604011X
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S199507801604011X