Skip to main content
Log in

A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal-organic vapor-phase epitaxy under lowered pressure, although the composition of the gas mixture, temperature, and pressure were maintained invariable in the course of the growth process. For different gas mixture compositions, the value of Δy and the manner of its variation were different. An analysis of the data obtained demonstrated that Δy is due to the deformations that appear in a growing layer because of the lattice mismatch with the substrate.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).

    Article  ADS  Google Scholar 

  2. M. Razeghi, MOCVD Challenge. Survey of GaInAsP–InP and GaInAsP–GaAs for Photonic and Electronic Device Applications, 2nd ed. (Taylor and Francis/CRC, Boca Raton, FL, 2010).

    Book  Google Scholar 

  3. P.-H. Lei, Opt. Commun. 273, 532 (2007).

    Article  ADS  Google Scholar 

  4. W. L. Holstein, J. Cryst. Growth 167, 525 (1996).

    Article  ADS  Google Scholar 

  5. V. V. Romanov, M. V. Baidakova, and K. D. Moiseev, Semiconductors 48, 733 (2014).

    Article  ADS  Google Scholar 

  6. K. D. Moiseev, V. V. Romanov, and Yu. A. Kudryavtsev, Phys. Solid State 58, 2285 (2016).

    Article  ADS  Google Scholar 

  7. V. I. Vasil’ev, G. S. Gagis, R. V. Levin, V. I. Kuchinskii, A. G. Deryagin, D. Yu. Kazantsev, and B. Ya. Ber, Tech. Phys. Lett. 43, 905 (2017).

    Article  ADS  Google Scholar 

  8. J. E. Cunningham, M. B. Santos, K. W. Goossen, M. D. Williams, and W. Jan, Appl. Phys. Lett. 64, 2418 (1994).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to G. S. Gagis.

Additional information

Original Russian Text © V.I. Vasil’ev, G.S. Gagis, R.V. Levin, A.E. Marichev, B.V. Pushnyi, M.P. Scheglov, V.I. Kuchinskii, B.Ya. Ber, D.Yu. Kazantsev, A.N. Gorokhov, T.B. Popova, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 24, pp. 17–24.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Vasil’ev, V.I., Gagis, G.S., Levin, R.V. et al. A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy. Tech. Phys. Lett. 44, 1127–1129 (2018). https://doi.org/10.1134/S1063785018120593

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785018120593

Navigation