Abstract
The feasibility of reducing the leakage currents of GaAs power diodes by chemically treating their surfaces in solutions of (NH4)2S in isopropanol is investigated. It is established that after chemical surface treatment the leakage current decreases more as the immersion time in the solution is increased (eightfold reduction) and also with an increase in the time of application of a reverse voltage U z =400 V (2.5-fold reduction).
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Fiz. Tekh. Poluprovodn. 33, 716–718 (June 1999)
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Botnaryuk, V.M., Zhilyaev, Y.V. & Konenkova, E.V. Sulfide passivation of GaAs power diodes. Semiconductors 33, 662–664 (1999). https://doi.org/10.1134/1.1187751
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DOI: https://doi.org/10.1134/1.1187751