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Mixed Phase Confirmation of InAsxP1−x Nanowire Array Using Modified Reciprocal Space Mapping

  • Original Article – Nanomaterials
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Abstract

In most cases, despite the bandgap tuning flexibility of ternary semiconducting nanowires, phase mixing during nanowire growth is inevitable because of the surface energy competition between the bulk stable zinc blende (ZB) and the metastable wurtzite (WZ) phase. As the electronic structure of the grown nanowires depends on not only the composition but also the crystal structure of the nanowires, careful characterization of the phase mixing phenomena in the nanowires is significant. However, because most of the phase analysis of grown nanowires relies on transmission electron microscopy (TEM), the phase analysis should be local, requires destructive sample preparation, and has a high time cost. Here, we developed a modified reciprocal space mapping method exploiting laboratory-based high-resolution X-ray diffraction (HR-XRD) for phase analysis in a one-dimensionally grown nanowire array on a (111) Si substrate in one measurement sequence. The main difficulty of phase analysis in a nanowire array using HR-XRD is the overlap of the diffraction peaks resulting from the structural similarity between ZB and WZ. Using the proposed method, we could successfully separate the diffraction overlapping of the WZ and ZB phases and reveal the lattice constants, composition, and effect of the strain of an InAsxP1−x nanowire array corresponding to the growth conditions in one measurement sequence. We also found that the crystallinity of metastable WZ was considerably lower than that of the bulk stable ZB in InAsxP1−x and that a phase fraction of WZ and ZB in InAsxP1−x nanowire arrays could be tuned by adjusting their composition and diameter.

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Acknowledgements

This research was supported by Establishment of the Foundation for Advanced Materials Measurement Platform funded by the Korea Research Institute of Standards and Science (KRISS-2021-GP2021-0011) and the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant No. 2020R1C1C1014257).

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Authors and Affiliations

  1. Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Republic of Korea

    In-Young Jeong, Minhyuk Choi, Jeongtae Kim, Chang-Soo Kim & Seungwoo Song

  2. Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul, 04763, Republic of Korea

    In-Young Jeong, Minhyuk Choi & Eun Kyu Kim

  3. Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea

    Jeongtae Kim

  4. Graduate School of Analytical Science and Technology (GRAST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea

    Young Heon Kim

  5. Department of Physics, Yeungnam University, Gyeongsan, 38541, Republic of Korea

    Jae Cheol Shin

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  1. In-Young Jeong
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  2. Minhyuk Choi
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Correspondence to Eun Kyu Kim, Chang-Soo Kim or Seungwoo Song.

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Jeong, IY., Choi, M., Kim, J. et al. Mixed Phase Confirmation of InAsxP1−x Nanowire Array Using Modified Reciprocal Space Mapping. Electron. Mater. Lett. 18, 79–86 (2022). https://doi.org/10.1007/s13391-021-00315-7

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