Abstract
This article presents a study of the mechanism of porous space formation on the surface of single-crystal indium phosphide. The dissolution features of crystals of various types of conductivity and crystallographic orientation of the surface are demonstrated. The attention is focused on the formation of pore chain channels on the surface of n-InP (111). The main stages of the pore formation process are highlighted, which are described according to two competing theories—spontaneous seeding and defect–dislocation mechanism.
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Acknowledgements
Y. Suchikova, S. Kovachov and I. Bohdanov acknowledge project 0121U109426 and 0122U000129 (Ukraine state budget research), while A.I. Popov thanks ISSP UL for the support. The ISSP as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020- WIDESPREAD-01-2016-2017-Teaming Phase2 under grant agreement No. 739508, project CAMART2.
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Suchikova, Y., Bohdanov, I., Kovachov, S. et al. Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces. Appl Nanosci 14, 231–239 (2024). https://doi.org/10.1007/s13204-023-02973-5
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DOI: https://doi.org/10.1007/s13204-023-02973-5