Abstract
Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm−3, a mobility of approximately 300 cm2·V−1·s−1, and a resistivity of approximately 102 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 µm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.
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Z. Ollmann, J.A. Fülöp, J. Hebling, and G. Almási, Design of a high-energy terahertz pulse source based on ZnTe contact grating, Opt. Commun., 315(2014), p. 159.
O. Skhouni, A. El Manouni, M. Mollar, R. Schrebler, and B. Marí, ZnTe thin films grown by electrodeposition technique on fluorine tin oxide substrates, Thin Solid Films, 564(2014), p. 195.
W.Y. Uen, S.Y. Chou, H.Y. Shin, S.M. Liao, and S.M. Lan, Characterizations of ZnTe bulks grown by temperature gradient solution growth, Mater. Sci. Eng. B, 106(2004), No. 1, p. 27.
T. Shimada, N. Kamaraju, C. Frischkorn, M. Wolf, and T. Kampfrath, Indication of Te segregation in laser-irradiated ZnTe observed by in situ coherent-phonon spectroscopy, Appl. Phys. Lett., 105(2014), No. 11, art. No. 111908.
C. Lévy-Clément, Applications of porous silicon to multicrystalline silicon solar cell: state of the art, ECS Trans., 50(2013), No. 37, p. 167.
A.I. Hochbaum, D. Gargas, Y.J. Hwang, and P.D. Yang, Single crystalline mesoporous silicon nanowires, Nano Lett., 9(2009), No. 10, p. 3550.
E. Monaico, G. Colibaba, D. Nedeoglo, and K. Nielsch, Porosification of III–V and II–VI semiconductor compounds, J. Nanoelectron. Optoelectron., 9(2014), No. 2, p. 307.
D. Piester, P. Bönsch, T. Schrimpf, H.H. Wehmann, and A. Schlachetzki, Laser-action in V-groove-shaped InGaAs-InP single quantum wires, IEEE J. Sel. Top. Quantum Electron., 6(2000), No. 3, p. 522.
L. Comerford and P. Zory, Selectively etched diffraction gratings in GaAs, Appl. Phys. Lett., 25(2003), No. 4, p. 208.
W.T. Tsang and S. Wang, Profile and groove-depth control in GaAs diffraction gratings fabricated by preferential chemical etching in H2SO4-H2O2-H2O system, Appl. Phys. Lett., 28(2008), No. 1, p. 44.
J.A. Steele, R.A. Lewis, L. Sirbu, M. Enachi, I.M. Tiginyanu, and V.A. Skuratov, Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane, Semicond. Sci. Technol., 30(2015), No. 4, art. No. 044003.
K. Radhanpura, S. Hargreaves, R.A. Lewis, L. Sirbu, and I.M. Tiginyanu, Heavy noble gas (Kr, Xe) irradiated (111) InP nanoporous honeycomb membranes with enhanced ultrafast all-optical terahertz emission, Appl. Phys. Lett., 97(2010), art. No. 181921.
J.A. Carson, Solar Cell Research Progress, Nova Publishers, New York, 2008.
J.G. Bañuelos, E.V. Basiuk, and J.M. Saniger-Blesa, Morphology of patterned semiconductor III–V surfaces prepared by spontaneous anisotropic chemical etching, Rev. Mex. Fis., 49(2003), p. 310.
E.V. Basiuk, Spontaneous anisotropic etching of the InP(100) surface in concentrated hydrochloric and sulfuric acids, Surf. Coat. Technol., 67(1994), No. 1-2, p. 51.
C.H. Su, A method of promoting single crystal yield during melt growth of semiconductors by directional solidification, J. Cryst. Growth, 410(2015), p. 35.
S.B. Trivedi, C.C. Wang, S. Kutcher, U. Hommerich, and W. Palosz, Crystal growth technology of binary and ternary II–VI semiconductors for photonic applications, J. Cryst. Growth, 310(2008), No. 6, p. 1099.
O.S. Babalola, Surface and Bulk Defects in Cadmium Zinc Telluride and Cadmium Manganese Telluride Crystals [Dissertation], Vanderbilt University, Nashville, 2009, p. 75.
R. Wang, J. Ge, D. Li, S.H. Hu, W.Z. Fang, N. Dai, and G.H. Ma, Radiation and detection of terahertz pulse in >331<oriented ZnTe single crsytal, Acta Photon. Sin., 38(2009), No. 9, p. 2330.
M. Uchida, Y. Matsuda, T. Asahi, K. Sato, and O. Oda, Stoichiometry control of ZnTe single crystals by the vapor pressure-controlled wafer-annealing method, J. Cryst. Growth, 216(2000), No. 1-4, p. 134.
A.S. Jordan and L. Derick, Vapor growth of high resistivity ZnTe, J. Electrochem. Soc., 116(1969), No. 10, p. 1424.
R. Yang, W.Q. Jie, H. Liu, and Y.D. Xu, Narrow shape distribution of Te inclusions in ZnTe single crystals grown from Te solution, J. Cryst. Growth, 404(2014), p. 14.
R. Wang, W.Z. Fang, P. Zhao, C.H. Zhang, L. Zhang, J. Ge, S.X. Yuan, H.E. Zhang, S.H. Hu, X.M. Shen, and N. Dai, Growth and characterization of >110<oriented ZnTe single crystal, Proc. SPIE, 6835(2007), art. No. 683519.
R. Yang and W.Q. Jie, Selective etching of ZnTe in HF:H2O2:H2O solution: Interpretation of extended defect-related etch figures, Cryst. Res. Technol., 50(2015), No. 3, p. 215.
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Yang, R., Jie, Wq. & Liu, H. Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth. Int J Miner Metall Mater 22, 755–761 (2015). https://doi.org/10.1007/s12613-015-1131-x
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DOI: https://doi.org/10.1007/s12613-015-1131-x