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Research progress of optoelectronic devices based on two-dimensional MoS2 materials

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Abstract

Molybdenum disulfide (MoS2) is a widely used optoelectronic material with exceptional electrical, magnetic, optical, and mechanical properties. Due to the quantum confinement effect, high absorption coefficient, high surface-volume ratio, and tunable bandgap, nano-MoS2-based devices exhibit size-dependent and novel optoelectronic properties, such as excellent photoluminescence and high anisotropic electrical, mechanical, and thermal properties. This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional (2D) nano-MoS2. Various advanced devices, such as sensors, photodetectors, light-emitting diodes (LEDs), memory applications, and field-effect transistors (FETs) are considered. The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.

Graphical abstract

摘要

二硫化钼 (MoS2) 是一种广泛应用的光电材料，具有优异的电学、磁学、光学和机械性能。 由于量子限制效应、高吸收系数、高表面体积比和可调带隙，基于纳米 MoS2 材料的器件表现出尺寸依赖性和新颖的光电性能，例如优异的光致发光和高各向异性的电学、机械和热学性能。 本文主要综述了基于二维（2D）纳米MoS2材料光电器件领域应用的最新进展。 考察和总结了各种先进的光电器件，例如传感器、光电探测器、发光二极管 (LED)、存储器应用和场效应晶体管 (FET)。并对基于纳米 MoS2 材料光电器件的未来发展做出了展望，例如，优化MoS2纳米结构的制造及其与不同衬底的集成，以提高光电器件的响应率，是未来二维光电应用领域可能的趋势。本综述将有助于进一步拓展新型二维纳米材料光电器件领域的应用。

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Reproduced with permission from Ref. [28]. Copyright 2021, Springer US

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Fig. 4

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Fig. 5

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Fig. 6

Reproduced with permission from Ref. [61]. Copyright 2020, Royal Society of Chemistry

Fig. 7

Reproduced with permission from Ref. [63]. Copyright 2018, American Association for the Advancement of Science

Fig. 8

Reproduced with permission from Ref. [68]. Copyright 2020, American Chemical Society

Fig. 9

Reproduced with permission from Ref. [69]. Copyright 2019, Royal Society of Chemistry

Fig. 10

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Fig. 11

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Fig. 14

Reproduced with permission from Ref. [88]. Copyright 2020, American Chemical Society

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62104090 and 11604133), the Natural Science Foundation of Shandong Province (No. ZR2017QA013), the Introduction and Cultivation Plan of Youth Innovation Talents for Universities of Shandong Province, the Science and Technology Plan of Youth Innovation Team for Universities of Shandong Province (No. 2019KJJ019), the Open Project of State Key Laboratory of Superhard Materials (Jilin University, Nos. 201503 and 201612), the Fundamental Research Funds for the Central Universities (buctrc 202122), the Research Funding of Liaocheng University (Nos. 318012016, 318051610, 318052136 and 318051612), and the Special Construction Project Fund for Shandong Province Taishan Scholars.

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  1. Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng, 252000, China

    Liang-Rui Zou, Dan-Dan Sang, Yu Yao, Xue-Ting Wang & Qing-Lin Wang

  2. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China

    Yuan-Yuan Zheng & Cong Wang

  3. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore

    Nai-Zhou Wang

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  1. Liang-Rui Zou
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  7. Cong Wang
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Correspondence to Dan-Dan Sang, Cong Wang or Qing-Lin Wang.

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Zou, LR., Sang, DD., Yao, Y. et al. Research progress of optoelectronic devices based on two-dimensional MoS2 materials. Rare Met. 42, 17–38 (2023). https://doi.org/10.1007/s12598-022-02113-y

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