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The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups

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Abstract

Compared with perovskite solar cells and silicon solar cells, the excessive voltage loss (Vloss) becomes a stubborn stone that seriously hinders the further improvement of organic photovoltaic (OPV). Thus, many researchers focus on finding an effective material system to achieve high-performance OPVs with low Vloss. In recent 5 years, acceptor-donor-acceptor’-donor-acceptor (A-DA’D-A) type non-fullerene acceptors (NFAs) have attracted great attention because of their promising photovoltaic performance. Among them, A-DA’D-A type NFAs containing non-halogenated end group (NHEG) exhibit the large potential to achieve high open-circuit voltage (VOC) for the state-of-the-art OPVs, because of high-lying molecular energy levels and decreasing Vloss. In this review, we systematically summarize the recent development of A-DA’D-A type NHEG-NFAs and the impact of different NHEGs on the optoelectronic properties as well as the photovoltaic performance. In addition, we especially analyze the Vloss of NHEG-NFAs in the binary and ternary OPV devices. At last, we provide perspectives on the further molecular design and future challenges for this kind of materials as well as suggested solutions.

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Acknowledgements

The authors thank the support from the National Natural Science Foundation of China (No. 22109142) and the Outstanding Talent Research Fund of Zhengzhou University (Nos. 32340035 and 32340100).

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Authors and Affiliations

  1. Henan Institute of Advanced Technology, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450003, China

    Hongxing Liu, Qing Guo, Qiang Guo & Erjun Zhou

  2. National Center for Nanoscience and Technology, Beijing, 100190, China

    Hongxing Liu, Tingting Dai, Jialing Zhou, Helin Wang & Erjun Zhou

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  1. Hongxing Liu
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  2. Tingting Dai
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  3. Jialing Zhou
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  4. Helin Wang
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  5. Qing Guo
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  6. Qiang Guo
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  7. Erjun Zhou
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Correspondence to Helin Wang or Erjun Zhou.

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Liu, H., Dai, T., Zhou, J. et al. The development of A-DA’D-A type nonfullerene acceptors containing non-halogenated end groups. Nano Res. 16, 12949–12961 (2023). https://doi.org/10.1007/s12274-023-5693-z

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  • DOI: https://doi.org/10.1007/s12274-023-5693-z

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