Abstract
In this study, the effect of external stress on the Cu microstructure evolution of electroplated Cu films was studied. We found that, with applying external compressive stress, abnormal grain growth occurred in the electroplated Cu films during thermal annealing. By studying the crystalline orientation mapping, we found the abnormal grain growth was attributed to the fast grain growth of the favorable Cu grains. We conclude that Cu grains with the (201) preferred orientation are the most favorable for the abnormal grain growth model under the external stress of 150 MPa and 300 MPa. Typically, subgrains (polygonization) formed by the dislocation rearrangement do not likely form in Cu, which is known to have a low stacking fault energy. Yet, by applying external stress, the energy barrier for the dislocation motion in Cu reduces. Subgrains and subgrain boundaries are observed in the Cu grains of electroplated Cu film when applying external stress.
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References
S.E. Thompson and S. Parthasarathy, Mater. Today 9, 20 (2006).
C.A. Mack, IEEE Trans. Semicond. Manuf. 24, 202 (2011).
M.Y. Li, S.K. Su, H.S.P. Wong, and L.J. Li, Nature 567, 169 (2019).
R. Chen, Y.C. Li, J.M. Cai, and K. Cao, Int. J. Extreme Manuf. 2, 022002 (2020).
A. Pirati, J. van Schoot, K. Troost, R. van Ballegoij, P. Krabbendam, J. Stoeldraijer, E. Loopstra, J. Benschop, J. Finders and H. Meiling, in extreme Ultraviolet (EUV) Lithography VIII (SPIE, 2017), pp. 57–72.
L. England and I. Arsovski, in 2017 IEEE International Electron Devices Meeting (IEDM) (IEEE, 2017), pp. 3.5.1–3.5.4.
C. Farnum and K. Rahim, in 2021 IEEE 71st Electronic Components and Technology Conference (ECTC) (IEEE, 2021), pp. 1749–1753.
M. Kawano, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (IEEE, 2021), pp. 1–3.
J.H. Lau, IEEE Trans. Compon. Packag. Manuf. Technol. 12, 228 (2022).
J. Lannon, C. Gregory, M. Lueck, A. Huffman and D. Temple, in 2009 59th Electronic Components and Technology Conference (IEEE, 2009), pp. 355–359.
P. Gondcharton, B. Imbert, L. Benaissa and M. Verdier, in 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) (IEEE, 2015), pp. 229–232.
L. Lu, N. Tao, L. Wang, B. Ding, and K. Lu, J. Appl. Phys. 89, 6408 (2001).
A. Hobbs, S. Murakami, T. Hosoda, S. Ohtsuka, M. Miyajima, S. Sugatani, and T. Nakamura, Mater. Trans. 43, 1629 (2002).
W.E. Frazier, G.S. Rohrer, and A.D. Rollett, Acta Mater. 96, 390 (2015).
L. Fu, H. Wang, W. Wang, and A. Shan, Mater. Sci. Technol. 27, 996 (2011).
J.M. Zhang, K.W. Xu, and V. Ji, Appl. Surf. Sci. 185(3–4), 177 (2002).
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This study was supported in part by the program MOST 111-2221-E-008-084-MY3
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Chang, JS., Chiu, CY., Huang, YC. et al. Abnormal Cu Grain Growth by External Stress on Electroplated Cu Films. JOM (2024). https://doi.org/10.1007/s11837-023-06343-y
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DOI: https://doi.org/10.1007/s11837-023-06343-y