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2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe

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Abstract

A 2D model for the annealing process after ion implantation in HgCdTe was established. The 2D model was based on the diffusion equations of Hg vacancy and interstitial. Generation and annihilation of the Hg vacancy and interstitial were considered. The coupled diffusion equations combined with the boundary equation were solved simultaneously. Annealing temperature and annealing time dependence experiments were carried out to determine the key parameter and prove the effectiveness of the 2D model. This work provides an efficient 2D model of the annealing process in n-on-p HgCdTe, which makes the junction design of HgCdTe less costly and more accurate and gives fundamental guidance to the fabrication of small-pitch focal planes.

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Funding

This work was supported by the National Natural Science Foundation of China under Grant Nos. 62004203 and 62004206, the Shanghai Sailing Program under Grant Nos. 19YF1454700 and 20YF1456000, and the Innovation Special Fund from Shanghai Institute of Technical Physics under Grant No. CX-336.

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  1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China

    Zhikai Gan, Yu Zhao, Chun Lin, Quanzhi Sun, Songmin Zhou, Xi Wang & Xun Li

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Correspondence to Zhikai Gan or Chun Lin.

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Gan, Z., Zhao, Y., Lin, C. et al. 2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe. J. Electron. Mater. 52, 2871–2877 (2023). https://doi.org/10.1007/s11664-023-10253-9

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