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Study of GaN-Based Superjunction CAVET with Dipole Layer to Further Improve On-Resistance and Breakdown Voltage

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Abstract

We propose a GaN-based superjunction current-aperture vertical electron transistor (CAVET) with a dipole layer (DL-SJ CAVET) and demonstrated two-dimensional numerical simulations by Silvaco-Atlas. The dipole layer (DL) formed by Al0.1Ga0.9N is attached to the Al0.15Ga0.85N barrier layer and located in the passivation layer between the source and the gate electrodes. The simulated results of the proposed device exhibit high breakdown voltage (BV) and low specific on-resistance (RonA).The BV can reach 2453 V and the RonA reach 2.23 mΩ·cm2.Compared with the conventional GaN SJ CAVET, the improvement of RonA and BV can realized in DL-SJ CAVET based on the special structure features. To improve the RonA, we proposed a novel DL-SJ CAVET with step-doping p-pillars and n-pillars (DS-SJ CAVET). Compared with DL-SJ CAVET under the same aspect ratio, DS-SJ CAVET can further decrease RonA by increasing differently doped layers in p-pillars and n-pillars. The RonA reaches 1.76 mΩ·cm2 while BV reaches 2640 V. Further reduction in RonA can be achieved by adding differently doped layers and differently doped concentrations in n-pillars and p-pillars with decreasing BV. The proposed devices can be fabricated by selective area growth (SAG) technology and it shows significant potential in microwave power applications.

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Acknowledgments

This work was supported in part by the Key-Area Research and Development of Guangdong Province (2019B010128002, 2020B010171002), Foshan Science and Technology Bureau (1920001000724), Guangdong Science and Technology Project (Grant 2019KTSCX084), and Guangzhou Science and Technology Program Key Projects (201807010083).

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  1. Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, 510631, China

    Jiancheng Ma, Zhiyou Guo, Huiqing Sun, Yuan Li, Miao Zhang, Xiaoyu Xia, Fan Xia, Xiuyang Tan, Zhihui Huang, Xiao Ding & Penglin Wang

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  1. Jiancheng Ma
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  3. Huiqing Sun
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Correspondence to Zhiyou Guo.

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Ma, J., Guo, Z., Sun, H. et al. Study of GaN-Based Superjunction CAVET with Dipole Layer to Further Improve On-Resistance and Breakdown Voltage. J. Electron. Mater. 51, 110–118 (2022). https://doi.org/10.1007/s11664-021-09267-y

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