Abstract
Nano-Ag sintering technology is a promising die attach method for power semiconductors in high reliability and high temperature (i.e. 300°C) applications. However, the present predictive models for thermal conductivity of multiphase materials are not suitable for the porous sintered Ag due to the model limitations of low porosity, i.e. < 10%, and simple pore geometry (sphere or ellipsoid). In this paper, an extension differential scheme (EDS) model based on the classical differential scheme (DS) approach has been developed. The thermal conductivity of the microporous Ag die attach layer on a SiC device was developed by measuring seven different sintering parameters that are fitted with the model. The finite element method (FEM) was also employed to analyze the influence of different factors. The results indicate that the EDS model has better adaptability and accuracy, which will be important for implementation of this new die attach material and technology.
Similar content being viewed by others
References
Z. Chen, Y. Yao, D. Boroyevich, K.D.T. Ngo, P. Mattavelli, and K. Rajashekara, IEEE Trans. Power Electron. 29, 2307 (2015).
W. Zhang, Y. Su, M. Mu, and D.J. Gilham, IEEE Trans. Power Electron. 30, 1421 (2015).
A.M. Abou-Alfotouh, A.V. Radun, H.R. Chang, and C. Winterhalter, IEEE Trans. Power Electron. 21, 880 (2017).
L.C. Wai, D.M. Zhi, V.S. Rao, and M.W. Daniel Rhee, in IEEE Electronic Packaging Technology Conference Proceedings (2012), pp. 372–378
L.C. Wai, W.W. Seit, E.P. Jian Rong, M.Z. Ding, V.S. Rao, and D.R. Minwoo, in IEEE Electronic Packaging Technology Conference Proceedings (2013), pp. 335–340
D. Wakuda, K.-S. Kim, and K. Suganuma, in IEEE International Conference on Polymers and Adhesives in Microelectronics and Photonics Proceedings (2008), pp. 1–6
D. Wakuda, K.-S. Kim, and K. Suganuma, in International Conference on Nanotechnology Proceedings (2009), pp. 412–415
R. Durairaj, R. Ashayer, H.R. Kotadia, N. Haria, C. Lorenz, O. Mokhtari, and S.H. Mannan, in International Conference on Nanotechnology Proceedings (2012), pp. 1–4.
R. Khazaka, L. Mendizabal, and D. Henry, J. Electron. Mater. 43, 2456 (2014).
S.A. Paknejad and S.H. Mannan, Microelectron. Rel. 7, 1 (2017).
N. Heuck, A. Langer, A. Stranz, G. Palm, R. Sittig, A. Bakin, and A. Waag, IEEE Trans. Compon. Packag. Manuf. Technol. 1, 1846 (2011).
T. Kunimune, M. Kuramoto, S. Ogawa, M. Niwa, M. Nogi, and K. Suganuma, IEEE Trans. Compon. Packag. Manuf. Technol. 2, 909 (2012).
R. Dudek, R. Doring, P. Sommer, B. Seiler, K. Kreyssig, H. Walter, M. Becker, and M. Gunther, in International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems Proceedings (2014), pp. 1–9
KonstantinMarkov and LuigiPreziosi, Heterogeneous Media : Micromechanics Modeling Methods and Simulations (New York: Springer, 2001), pp. 21–85.
J.C. Maxwell, A Treatise on Electricity and magnetism (Humphrey Milford: Oxford University Press, 1955), pp. 478–480.
J.D. Eshelby, in Royal Society of London Series Mathematical and Physical Sciences Proceedings (1957), pp. 376–396
S.T. Chua and K.S. Siow, J. Alloys Compd. 687, 486 (2016).
F. Jafari and P.D. Higgins, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 36, 21 (1989).
L.S. Pritchard, P.P. Acarnley, and C.M. Johnson, IEEE Trans. Compon. Packag. Technol. 27, 259 (2004).
J.D. Eshelby, Prog. Solid Mech. 2, 87 (1961).
X. Markenscoff, J. Elast. 49, 163 (1997).
G.J. Rodin, J. Mech. Phys. Solids 44, 1977 (1996).
V.A. Lubarda and X. Markenscoff, Int. J. Solids Struct. 35, 3406 (1998).
I.I. Bogdanov, V.V. Mourzenko, J.F. Thovert, and P.M. Adler, Water Resour. Res. 39, 257 (2003).
D.A.G. Bruggeman, Ann. Phys-Berlin 24, 636 (1935).
D.A.G. Bruggeman, Ann. Phys-Berlin 25, 645 (1936).
R. McLaughlin, Int. J. Eng. Sci. 15, 237 (1977).
Z. Wang, J.E. Alaniz, W. Jang, J.E. Garay, and C. Dames, Nano Lett. 11, 2206 (2011).
H. Dong, B. Wen, and R. Melnik, Sci. Rep-UK 4, 7037 (2014).
J. Bliedtner and W. Hansen, Potential Theory (New York: Springer, 1986), pp. 93–131.
I.C. Kim and S. Torquato, J. Appl. Phys. 71, 2727 (1992).
A. Lawley, Advances in Metal Processing, ed. J.J. Burke, R. Mehrabian, and V. Weiss (Boston: Springer, 1981), p. 91.
I. Doltsinis and F. Osterstock, Arch. Comput. Methods Eng. 12, 303 (2005).
N.W. Chen, and C. Hong, in IEEE International Conference on Systems, Man and Cybernetics Proceedings (1987), pp. 177–181
Y. Luo, in IEEE CPMT Symposium Japan Proceedings (2010), pp. 1–5
F. Yu, J. Cui, Z. Zhou, K. Fang, R.W. Johnson, and M.C. Hamilton, IEEE Trans. Power Electron. 32, 7083 (2017).
P. He, J. Zhang, J. Zhang, and L. Yin, Adv. Mater. Sci. Eng. 2017, 1 (2017).
V. Szekely, Microelectron. J. 28, 277 (1997).
J.G. Bai, Z.Z. Zhang, G.Q. Lu, and D.P.H. Hasselman, Int. J. Thermophys. 26, 1607 (2005).
H. Wang, Y. Xu, M. Shimono, Y. Tanaka, and M. Yamazaki, Mater. Trans. 48, 2349 (2007).
Y. Ocak, S. Aksöz, N. Maraşlı, and E. Çadırlı, Fluid Phase Equilib. 295, 60 (2010).
A. Aizaz, P. Bauer, T.L. Grimm, N.T. Wright, and C.Z. Antoine, IEEE Trans. Appl. Supercond. 17, 1310 (2007).
S.S. Mahajan, G. Subbarayan, and B.G. Sammakia, IEEE Trans. Compon. Packag. Manuf. Technol. 1, 1132 (2011).
Acknowledgments
This work was supported by National Key Research and Development Program of China (2017YFB1104900), and National Natural Science Foundation of China (Grant Nos. 51520105007, 51775299)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Zhao, Z., Zhang, H., Zou, G. et al. A Predictive Model for Thermal Conductivity of Nano-Ag Sintered Interconnect for a SiC Die. J. Electron. Mater. 48, 2811–2825 (2019). https://doi.org/10.1007/s11664-019-06984-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-019-06984-3