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Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current

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Abstract

Dielectric engineering plays a crucial role in the process of device miniaturization. Herein we investigate the electrical properties of bilayer GaSe metal-oxide-semiconductor field-effect transistors (MOSFETs), considering hetero-gate-dielectric construction, dielectric materials and GaSe stacking pattern. The results show that device performance strongly depends on the dielectric constants and locations of insulators. When high-k dielectric is placed close to the drain, it behaves with a larger on-state current (Ion) of 5052 µA/µm when the channel is 5 nm. Additionally, when the channel is 5 nm and insulator is HfO2, the largest Ion is 5134 µA/µm for devices with AC stacking GaSe channel. In particular, when the gate length is 2 nm, it still meets the HP requirements of ITRS 2028 for the device with AA stacking when high-k dielectric is used. Hence, the work provides guidance to regulate the performance of the two-dimensional nanodevices by dielectric engineering.

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Acknowledgements

This research was supported by the National Natural Science Foundation of China (Grants Nos. 12374070 and 12074103), the Foundation for University Key Young Teacher of Henan (Grant No. 2023GGJS035), Henan Province Postdoctoral Project Launch Funding (Grant No. 5201029430112), and the Science and Technology Program of Henan (Grant No. 232102230080). The calculations are also supported by the High Performance Computing Center of Henan Normal University.

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Authors and Affiliations

  1. College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, 453007, China

    Xueping Li, Xiaojie Tang & Zhuojun Wang

  2. Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Xinxiang, 453007, China

    Xueping Li

  3. School of Physics, Henan Normal University, Xinxiang, 453007, China

    Xueping Li, Peize Yuan, Lin Li, Chenhai Shen & Congxin Xia

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  1. Xueping Li
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Correspondence to Congxin Xia.

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Li, X., Tang, X., Wang, Z. et al. Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current. Front. Phys. 19, 53202 (2024). https://doi.org/10.1007/s11467-023-1390-3

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