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Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

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Abstract

Polarization-sensitive photodetection and imaging have great application value in fields such as polarization division multiplexing optical communication, remote sensing, near-field imaging and military monitoring. Pursuing a high polarization ratio has always been the research hotspot in polarization-sensitive photodetectors. In this paper, we report a compression strain enhanced polarization ratio in β-gallium oxide (β-Ga2O3) single crystal flake. A rigorous crystallographic analysis confirmed its high crystalline quality and orientation. Angle-resolved polarization Raman spectroscopy (ARPRS) was adopted to study the anisotropy of its optical properties. Extensive ARPRS measurements and theoretical calculation consistently demonstrate the strong optical anisotropy in the high-quality β-Ga2O3 flake. A polarization ratio of 0.96 was obtained in the flat β-Ga2O3 flake. Furthermore, mechanical strain of ±0.7% was introduced into β-Ga2O3. An increased polarization ratio of 0.98 was achieved in the case of 0.7% compression strain, which is, to the best of our knowledge, the highest value for UVC polarization-sensitive photodetectors. That corresponds to an improved polarization rejection ratio of 100. This work proposed a new path towards improving polarization sensitivity by applying strain engineering in the active material.

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255000, China

    Yonghui Zhang, Fei Xing, Qiqian Gao, Yu Feng & Yuping Sun

  2. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    Yonghui Zhang, Huili Liang & Zengxia Mei

  3. Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Huili Liang & Zengxia Mei

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  1. Yonghui Zhang
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  2. Huili Liang
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  3. Fei Xing
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Correspondence to Yonghui Zhang, Yuping Sun or Zengxia Mei.

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Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 61505109, 12174275, 62174113, and 11974108), Youth Innovative Talents Attracting and Cultivating Plan of Colleges and Universities in Shandong Province (No. 21), Youth Innovation Team of Colleges and Universities in Shandong Province (Grant No. 2022KJ223), Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022A1515110607), and Shandong Provincial Natural Science Foundation (Grant Nos. ZR2021QF020, ZR2022QF055, and ZR2021QE080).

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Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector

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Zhang, Y., Liang, H., Xing, F. et al. Strain-enhanced polarization sensitivity in β-Ga2O3 photodetector. Sci. China Phys. Mech. Astron. 67, 247312 (2024). https://doi.org/10.1007/s11433-023-2307-6

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