Abstract
In this paper, InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate. The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate. The photo responsivities of both devices measured at 1.55 µm are comparable, which are about 0.808–0.828 A W−1. Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K, the peak detectivities of both PDs are comparable. In general, the overall performance of the InPOI-based PD is comparable to the InP-based PD, demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.
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P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Nötzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010).
Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi, IEEE Photon. Technol. Lett. 27, 1569 (2015).
D. A. B. Miller, Appl. Opt. 49, F59 (2010).
D. X. Xu, J. H. Schmid, G. T. Reed, G. Z. Mashanovich, D. J. Thomson, M. Nedeljkovic, X. Chen, D. Van Thourhout, S. Keyvaninia, and S. K. Selvaraja, IEEE J. Sel. Top. Quantum Electron. 20, 189 (2014).
R. Jones, P. Doussiere, J. B. Driscoll, W. Lin, H. Yu, Y. Akulova, T. Komljenovic, and J. E. Bowers, IEEE Nanotechnol. Mag. 13, 17 (2019).
D. Liang, and J. E. Bowers, Electron. Lett. 45, 578 (2009).
M. Smit, K. Williams, and J. v. d. Tol, in 1.3 Integration of Photonics and Electronics: IEEE International Conference on Solid-State Circuits (ISSCC), San Francisco, USA, 2019, pp. 29–34.
K. A. Williams, E. A. J. M. Bente, D. Heiss, Y. Jiao, K. Ławniczuk, X. J. M. Leijtens, J. J. G. M. van der Tol, and M. K. Smit, Photon. Res. 3, B60 (2015).
K. Sun, D. Jung, C. Shang, A. Liu, J. Morgan, J. Zang, Q. Li, J. Klamkin, J. E. Bowers, and A. Beling, Opt. Express 26, 13605 (2018).
T. E. Crumbaker, H. Y. Lee, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 54, 140 (1989).
B. Shi, Q. Li, and K. M. Lau, J. Cryst. Growth 464, 28 (2017).
S. Yang, H. Lv, L. Ai, F. Tian, S. Yan, and Y. Zhang, Coatings 9, 823 (2019).
Y. Gu, W. Huang, N. Yang, Y. Ma, Y. Shi, Q. Gong, J. Zhang, H. Huang, G. He, Y. Zhang, X. Shao, X. Li, and H. Gong, Mater. Res. Express 6, 075908 (2019).
S. M. Lee, Y. J. Cho, J. B. Park, K. W. Shin, E. Hwang, S. Lee, M. J. Lee, S. H. Cho, D. Su Shin, J. Park, and E. Yoon, J. Cryst. Growth 416, 113 (2015).
H. Kataria, C. Junesand, Z. Wang, W. Metaferia, Y. T. Sun, S. Lourdudoss, G. Patriarche, A. Bazin, F. Raineri, P. Mages, N. Julian, and J. E. Bowers, Semicond. Sci. Technol. 28, 094008 (2013).
O. Moutanabbir, and U. Gösele, Annu. Rev. Mater. Res. 40, 469 (2010).
J. Lin, T. You, M. Wang, K. Huang, S. Zhang, Q. Jia, M. Zhou, W. Yu, S. Zhou, X. Wang, and X. Ou, Nanotechnology 29, 504002 (2018).
J. Lin, T. You, T. Jin, H. Liang, W. Wan, H. Huang, M. Zhou, F. Mu, Y. Yan, K. Huang, X. Zhao, J. Zhang, S. Wang, P. Gao, and X. Ou, APL Mater. 8, 051110 (2020).
O. Moutanabbir, S. Christiansen, S. Senz, R. Scholz, M. Petzold, and U. Gösele, ECS Trans. 16, 251 (2008).
J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).
Y. Hu, D. Liang, K. Mukherjee, Y. Li, C. Zhang, G. Kurczveil, X. Huang, and R. G. Beausoleil, Light Sci. Appl. 8, 93 (2019).
P. L. Gourley, and T. J. Drummond, Appl. Phys. Lett. 50, 1225 (1987).
Y. S. Wang, S. J. Chang, Y. Z. Chiou, and W. Lin, J. Electrochem. Soc. 155, J307 (2008).
K. Swaminathan, L. M. Yang, T. J. Grassman, G. Tabares, A. Guzman, A. Hierro, M. J. Mills, and S. A. Ringel, Opt. Express 19, 7280 (2011).
J. Yang, M. Shi, X. Shao, T. Li, X. Li, N. Tang, H. Gong, R. Liu, H. Tang, and Z. J. Qiu, Infrared Phys. Tech. 71, 272 (2015).
C. Li, Y. Zhang, K. Wang, Y. Gu, H. Li, and Y. Y. Li, Infrared Phys. Tech. 53, 173 (2010).
G. Cao, T. Li, H. Tang, X. Shao, X. Li, and H. Gong, in 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, Harbin, China, 26–29 April 2014, edited by Y. Jiang, J. Yu, and B. Kippelen, p. 928406.
Y. Ma, Y. Zhang, Y. Gu, X. Chen, S. Xi, B. Du, and H. Li, Opt. Express 23, 19278 (2015).
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This work was supported by the National Key Research and Development Program of China (Grant No. 2017YFE0131300), the National Natural Science Foundation of China (Grant Nos. U1732268, 61874128, 11622545, 61851406, 11705262, 61875220, and 61804157), the Frontier Science Key Program of Chinese Academy of Sciences (Grant Nos. QYZDY-SSW-JSC032, and ZDBS-LY-JSC009), the Chinese-Austrian Cooperative Research and Development Project (Grant No. GJHZ201950), the Shanghai Science and Technology Innovation Action Plan Program (Grant No. 17511106202), the Program of Shanghai Academic Research Leader (Grant No. 19XD1404600), the Shanghai Youth Top Talent Program, Shanghai Sailing Program (Grant Nos. 19YF1456200, and 19YF1456400), the K. C. Wong Education Foundation (Grant No. GJTD-2019-11), and the NCBiR within the Polish-China (Grant No. WPC/130/NIR-Si/2018).
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Chi, C., Lin, J., Chen, X. et al. Si-based InGaAs photodetectors on heterogeneous integrated substrate. Sci. China Phys. Mech. Astron. 64, 267311 (2021). https://doi.org/10.1007/s11433-020-1673-1
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DOI: https://doi.org/10.1007/s11433-020-1673-1