Abstract
The paper presents the results of numerical modeling the multistage heating dynamics for monocrystalline silicon under the influence of a femtosecond laser pulse. It is shown that at fluences near or below the melting threshold, Auger recombination leads to an increase in the maximum surface temperature, which is achieved at times of several tens of picoseconds, which generally causes a noticeably longer thermal aftereffect of an ultrashort laser pulse. The choice of different models for the Auger recombination rate has little effect on the calculation result. Recombination processes affect the residual heating of silicon surface on a microsecond time scale, which is especially important for laser processing at megahertz pulse repetition rates. The results obtained allow explaining the development of activation-type processes accompanying the laser fabrication of silicon surface.
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Change history
27 January 2023
A Correction to this paper has been published: https://doi.org/10.1007/s11082-023-04613-2
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Acknowledgements
The reported study was financially supported by the Ministry of Science and Higher Education of the Russian Federation research agreement No. 075-11-2021-045 of 24.06.2021, project title “Development of high-tech production of equipment and technologies for laser functionalization of medical devices” (within the framework of decree of the Government of the Russian Federation No. 218 of 09/04/2010).
Funding
The reported study was financially supported by the Ministry of Science and Higher Education of the Russian Federation research agreement No. 075-11-2021-045 of 24.06.2021, project title “Development of high-tech production of equipment and technologies for laser functionalization of medical devices” (within the framework of decree of the Government of the Russian Federation No. 218 of 09/04/2010).
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Polyakov, D., Shamova, A. & Shandybina, G. Analysis of contributions of electron-phonon relaxation and recombination processes to silicon heating by femtosecond laser pulse. Opt Quant Electron 55, 122 (2023). https://doi.org/10.1007/s11082-022-04330-2
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DOI: https://doi.org/10.1007/s11082-022-04330-2