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Comparison of Cu, Al, and Zr metallic contacts for chalcopyrite CIGS thin-film

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Abstract

Glass/Mo/CIGS was produced by the physical vapor deposition method and its morphological and structural characterizations were performed. The forbidden band gap and electron affinity values of the CIGS material were calculated depending on the element ratio of the EDS result obtained for CIGS thin films. The current–voltage (I–V) measurements of Cu/CIGS/Mo, Al/CIGS/Mo, and Zr/CIGS/Mo structures were taken at room temperature. While the Cu/CIGS structure exhibited ohmic behavior, rectifying behavior was observed for Al and Zr contacts. The zero-bias barrier height values for Al/p-CIGS and Zr/p-CIGS devices were calculated as 0.78 and 0.72 eV, respectively. The barrier heights determined from the experimental I−V measurements were lower than the barrier heights calculated using the Schottky–Mott model. When the contact characteristics of Al/CIGS and Zr/CIGS Schottky diodes were compared, Al performed better than Zr.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Funding

We thanks to Council of Higher Education (Yükseköğretim Kurulu, YÖK) for supported to Celal Alp Yavru (one of the authors of this article) under 100/2000 Ph.D. scholarship program. We also thank the BAP-4905-YL1-17 project of the Süleyman Demirel University Scientific Research Projects Coordination Unit.

Author information

Authors and Affiliations

  1. Department of Electrical-Electronic Engineering, Graduate Education Institute, Isparta University of Applied Sciences, 32260, Isparta, Turkey

    Celal Alp Yavru

  2. Department of Physics, Süleyman Demirel University, 32260, Isparta, Turkey

    Murat Kaleli & Durmuş Ali Aldemir

  3. Innovative Technologies Application and Research Center (YETEM), Süleyman Demirel University, 32260, Isparta, Turkey

    Murat Kaleli

  4. Department of Electrical-Electronic Engineering, Isparta University of Applied Sciences, 32260, Isparta, Turkey

    İsmail Serkan Üncü

  5. Ministry of Science and Technology, Baghdad, 10081, Iraq

    Salman Ajeel Ali Al-Saedi

  6. Graduate School of Natural and Applied Sciences, Süleyman Demirel University, 32260, Isparta, Turkey

    Salman Ajeel Ali Al-Saedi

Authors
  1. Celal Alp Yavru
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  2. Murat Kaleli
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  3. İsmail Serkan Üncü
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  4. Salman Ajeel Ali Al-Saedi
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Contributions

CAY: Contributed to the experimentation, data analysis, collation, and manuscript preparation. MK: Contributed to the methodology, data analysis and theorization. SAA: Contributed to the investigation and experimentation İSÜ: Contributed to the theorization. DAA: Contributed to writing, reviewing, and editing.

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Correspondence to Celal Alp Yavru.

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Yavru, C.A., Kaleli, M., Üncü, İ.S. et al. Comparison of Cu, Al, and Zr metallic contacts for chalcopyrite CIGS thin-film. J Mater Sci: Mater Electron 34, 1176 (2023). https://doi.org/10.1007/s10854-023-10585-6

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