The chemical composition of Cu(In,Ga)Se2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap Eg for this material in the 1.05–1.72 eV spectral range at 4.2 K.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 77, No. 3, pp. 400–406, May–June, 2010.
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Mudryi, A.V., Gremenok, V.F., Karotki, A.V. et al. Structural and optical properties of thin films of Cu(In,Ga)Se2 semiconductor compounds. J Appl Spectrosc 77, 371–377 (2010). https://doi.org/10.1007/s10812-010-9341-5
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DOI: https://doi.org/10.1007/s10812-010-9341-5