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Photo sensing performance with electro-optically efficient n-Zn1−xMgxO/p-Si heterojunction

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Abstract

Photodetector is one the most intensively investigated opto-electronic devices as it readily converts optical signal into electrical current. Large area heterojunction-based photodetectors have great potential due to efficient light harvesting abilities. Herein, we report the n-Zn1−xMgxO/p-Si heterojunction-based photodetector for detection of 390 nm light. Pulse laser deposition technique has been employed for large area (1 × 1 cm2) and atomically thin film of Zn1−xMgxO ternary alloy on Si substrate. Photodiode has shown obvious current rectifying behaviour with ideality factor of 2.6. Photodetector based on n-Zn1−xMgxO/p-Si heterojunction has shown fast photoswitching action with response time 100 ms. Detector has shown photoresponsivity of 12 µA/W, specific detectivity of 1.1 × 108 Jones and EQE of 4 × 10−3 for 390 nm light.

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Authors and Affiliations

  1. Department of electronics, Sardar Patel University, Vallabh Vidyanagar, 388120, India

    Vikas Patel & Basumati H. Patel

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  1. Vikas Patel
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  2. Basumati H. Patel
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Correspondence to Vikas Patel.

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Patel, V., Patel, B.H. Photo sensing performance with electro-optically efficient n-Zn1−xMgxO/p-Si heterojunction. J Mater Sci: Mater Electron 32, 15615–15621 (2021). https://doi.org/10.1007/s10854-021-06110-2

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  • DOI: https://doi.org/10.1007/s10854-021-06110-2

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