Skip to main content
SpringerLink
Log in

High pressure synthesis of multiple doped Mg2Si-based thermoelectric materials

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

High pressure high temperature technology is an effective route for preparing thermoelectric materials. In this work, a series of multi-doped Mg2.02−xAl x Si1−3yBi2ySb y (x = 0.03, 0.06, y = 0.005, 0.01) compounds have been prepared successfully by high pressure and high temperature method. The effects of post annealing on the microstructure and thermoelectric properties have been investigated. It is found that both electrical conductivity and thermal conductivity are significantly suppressed by annealing. Lower lattice thermal conductivities are observed in Mg1.96Al0.06Si1−3yBi2ySb y compounds, which should be attributed to the increased point-defects phonon scattering of Bi and Sb dopants induced by Al addition. Finally, a maximal figure of merit of 0.9 is achieved by Mg1.96Al0.06Si0.985Bi0.01Sb0.005 at 773 K.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Date for Al and Bi co-doped Mg2Si are taken from Ref. [21]

Similar content being viewed by others

References

  1. F.J. DiSalvo, Science 285, 703–706 (1999)

    Article  Google Scholar 

  2. J. He, T.M. Tritt, Science 357, eaak9997 (2017)

    Article  Google Scholar 

  3. W. Liu, K. Yin, Q.J. Zhang, C. Uher, X.F. Tang, Natl. Sci. Rev. 4, 611–626 (2017)

    Article  Google Scholar 

  4. O. Janka, J.V. Zaikina, S.K. Bux, H. Tabatabaifar, H. Yang, N.D. Browning, S.M. Kauzlarich, J. Solid State Chem. 245, 152–159 (2017)

    Article  Google Scholar 

  5. Q. Zhang, Y. Zheng, X.L. Su, K. Yin, X.F. Tang, C. Uher, Scr. Mater. 96, 1–4 (2015)

    Article  Google Scholar 

  6. M. Ioannou, G.S. Polymeris, E. Hatzikraniotis, K.M. Paraskevopoulos, T. Kyratsi, J. Phys. Chem. Solids 75, 984–991 (2014)

    Article  Google Scholar 

  7. S. Sharma, S.K. Pandey, Comput. Mater. Sci. 85, 340–346 (2014)

    Article  Google Scholar 

  8. J. de Boor, T. Dasgupta, H. Kolb, C. Compere, K. Kelm, E. Mueller, Acta Mater. 77, 68–75 (2014)

    Article  Google Scholar 

  9. W. Liu, X.J. Tan, K. Yin, H.J. Liu, X.F. Tang, J. Shi, Q.J. Zhang, C. Uher, Phys. Rev. Lett. 108, 166601 (2012)

    Article  Google Scholar 

  10. T. Dasgupta, C. Stiewe, R. Hassdorf, A.J. Zhou, L. Boettcher, E. Mueller, Phys. Rev. B 83, 235207 (2011)

    Article  Google Scholar 

  11. P. Gao, X. Lu, I. Berkun, R.D. Schmidt, E.D. Case, T.P. Hogan, Appl. Phys. Lett. 105, 202104 (2014)

    Article  Google Scholar 

  12. J. Zhao, Z. Liu, R.A. Gordon, K. Takarabe, J. Reid, J.S. Tse, J. Appl. Phys. 118, 145902 (2015)

    Article  Google Scholar 

  13. K. Arai, A. Sasaki, Y. Kimori, M. Iida, T. Nakamura, Y. Yamaguchi, K. Fujimoto, R. Tamura, T. Iida, K. Nishio, Mater. Sci. Eng. B 195, 45–49 (2015)

    Article  Google Scholar 

  14. N. Farahi, M. VanZant, J. Zhao, J.S. Tse, S. Prabhudev, G.A. Botton, J.R. Salvador, F. Borondics, Z. Liu, H. Kleinke, Dalton Trans. 43, 14983–14991 (2014)

    Article  Google Scholar 

  15. S. Battiston, S. Fiameni, M. Saleemi, S. Boldrini, A. Famengo, F. Agresti, M. Stingaciu, M.S. Toprak, M. Fabrizio, S. Barison, J. Electron. Mater. 42, 1956–1959 (2013)

    Article  Google Scholar 

  16. S.-M. Choi, K.-H. Kim, I.-H. Kim, S.-U. Kim, W.-S. Seo, Curr. Appl. Phys. 11, S388-S391 (2011)

    Google Scholar 

  17. J.-Y. Jung, I.-H. Kim, J. Electron. Mater. 40, 1144–1149 (2011)

    Article  Google Scholar 

  18. G.S. Nolas, D. Wang, M. Beekman, Phys. Rev. B 76, 235204 (2007)

    Article  Google Scholar 

  19. H. Ihou-Mouko, C. Mercier, J. Tobola, G. Pont, H. Scherrer, J. Alloys Compd. 509, 6503–6508 (2011)

    Article  Google Scholar 

  20. J. Tani, H. Kido, Physica B 364, 218–224 (2005)

    Article  Google Scholar 

  21. G. Kim, J. Kim, H. Lee, S. Cho, I. Lyo, S. Noh, B.-W. Kim, S.W. Kim, K.H. Lee, W. Lee, Scr. Mater. 116, 11–15 (2016)

    Article  Google Scholar 

  22. S. Muthiah, B. Sivaiah, B. Gahtori, K. Tyagi, A.K. Srivastava, B.D. Pathak, A. Dhar, R.C. Budhani, J. Electron. Mater. 43, 2035–2039 (2014)

    Article  Google Scholar 

  23. P.W. Zhu, X. Jia, H.Y. Chen, W.L. Guo, L.X. Chen, D.M. Li, H.A. Ma, G.Z. Ren, G.T. Zou, Solid State Commun. 123, 43–47 (2002)

    Article  Google Scholar 

  24. N.V. Morozova, S.V. Ovsyannikov, I.V. Korobeinikov, A.E. Karkin, K. Takarabe, Y. Mori, S. Nakamura, V.V. Shchennikov, J. Appl. Phys. 115, 213705 (2014)

    Article  Google Scholar 

  25. S. Li, X.P. Jia, H.A. Ma, Chem. Phys. Lett. 549, 22–26 (2012)

    Article  Google Scholar 

  26. Y.J. Zhu, J.L. Li, B. Duan, Y. Li, P.C. Zhai, P. Li, J. Mater. Sci. 28, 9535–9541 (2017)

    Google Scholar 

  27. J.L. Li, G. Chen, B. Duan, Y.J. Zhu, X.J. Hu, P.C. Zhai, P. Li, J. Electron. Mater. 46, 2570–2575 (2017)

    Article  Google Scholar 

  28. J. Tani, H. Kido, J. Alloys Compd. 466, 335–340 (2008)

    Article  Google Scholar 

  29. S.-W. You, K.-H. Park, I.-H. Kim, S.-M. Choi, W.-S. Seo, S.-U. Kim, J. Electron. Mater. 41, 1675–1679 (2012)

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Natural Science Foundation of China (51772231), the Fundamental Research Funds for the Central Universities (WUT 2018IB002 and 2018IB007) and the open foundation of Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics (TAM201806).

Author information

Authors and Affiliations

  1. Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China

    Jiaming Wei, Bo Duan, Jialiang Li, Houjiang Yang, Gang Chen & Pengcheng Zhai

  2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China

    Pengcheng Zhai

Authors
  1. Jiaming Wei
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Bo Duan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jialiang Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Houjiang Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Gang Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Pengcheng Zhai
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Bo Duan.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wei, J., Duan, B., Li, J. et al. High pressure synthesis of multiple doped Mg2Si-based thermoelectric materials. J Mater Sci: Mater Electron 29, 10904–10910 (2018). https://doi.org/10.1007/s10854-018-9168-z

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-018-9168-z

Search

Navigation