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Exploring the oxidation mechanisms of black phosphorus: a review

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Abstract

Black phosphorus (BP) has unmatched application advantages as a two-dimensional semiconductor in electronic and optoelectronic devices owing to its tunable direct bandgap, high carrier mobility, and significant in-plane anisotropy. However, the commercial use of BP is limited owing to its instability. BP oxidizes easily under ambient conditions, leading to device performance degradation. The oxidation behavior and mechanisms of BP are understood to a certain extent, with a few reviews outlining the reported results. Nevertheless, no review has attempted to discuss the inconsistencies that have emerged from studies of BP oxidation. The roles of light, oxygen, and water in the process of BP oxidation are reviewed herein, accompanied by a critical discussion of important and inconsistent results. Because defects and edges inevitably exist in BP, the formation and chemical activity of defects and edge configurations of BP are comprehensively examined for the first time. The final part of this paper provides insights toward a deeper understanding of BP oxidation and possible passivation strategies.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 12204532 and 52174137), the Natural Science Foundation of Jiangsu Province (BK20200648), the Innovative and Entrepreneurial Doctor Funding of Jiangsu (140921014 and 140921029), and the Fundamental Research Funds for the Central Universities, China (2020QN25 and 2020QN23).

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    Quanjie Zhong & Xiaojuan Pang

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Zhong, Q., Pang, X. Exploring the oxidation mechanisms of black phosphorus: a review. J Mater Sci 58, 2068–2086 (2023). https://doi.org/10.1007/s10853-023-08171-6

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