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2D layered black arsenic-phosphorus materials: Synthesis, properties, and device applications

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Abstract

Phosphorene, especially black phosphorus (BP), has attracted considerable attention due to the unique characteristics, such as tunable direct bandgap, high carrier mobility, and strong in-plane anisotropy. Recently, a new modification strategy for black phosphorus has been developed by alloying black phosphorus with the congener element arsenic. The elemental composition tuning of black phosphorus with arsenic can not only maintain its special crystal structure and high anisotropy but also modify its electrical and optical properties for the further applications of multifunctional devices. The achieved two-dimensional (2D) black arsenic-phosphorus materials exhibit outstanding optical, electrical, and photoelectric properties, such as very narrow band gap, anisotropic infrared absorption, and bipolar transfer characteristics, presenting great potential in infrared photodetectors and high-performance field effect transistors (FETs). In this review, we introduce the recent progress made in the synthesis and applications of black arsenic-phosphorus, and provide an outlook and perspectives on the current challenges and future opportunities in this field. We hope that this review can bring new insights and inspirations on the further development of 2D black arsenic-phosphorus based materials and devices.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (No. 2017YFA0208200), the Fundamental Research Funds for the Central Universities of China (No. 0205-14380266), the National Natural Science Foundation of China (Nos. 22022505, 21872069, and 22109069), the Natural Science Foundation of Jiangsu Province (No. BK20180008), the Doctoral Innovation and Entrepreneurship Program of Jiangsu Province (No. JSSCBS20210045), and the Shenzhen Fundamental Research Program of Science, Technology and Innovation Commission of Shenzhen Municipality (No. JCYJ20180307155007589).

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  1. Junchuan Liang and Yi Hu contributed equally to this work.

Authors and Affiliations

  1. MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China

    Junchuan Liang, Yi Hu, Kaiqiang Zhang, Yaoda Wang, Xinmei Song, Anyang Tao, Yuzhu Liu & Zhong Jin

  2. Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China

    Junchuan Liang, Yi Hu, Kaiqiang Zhang, Yaoda Wang, Xinmei Song, Anyang Tao, Yuzhu Liu & Zhong Jin

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  1. Junchuan Liang
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Liang, J., Hu, Y., Zhang, K. et al. 2D layered black arsenic-phosphorus materials: Synthesis, properties, and device applications. Nano Res. 15, 3737–3752 (2022). https://doi.org/10.1007/s12274-021-3974-y

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