Abstract
Dihydrogen (H2), commonly named ‘hydrogen,’ is considered as a promising renewable fuel that does not emit carbon dioxide upon combustion. Nonetheless, since hydrogen is actually mainly produced from fossil fuels, sustainable methods such as water splitting are required. For that, metal oxide semiconductors have been explored as photoelectrode materials. In particular, post-transition metal oxide semiconductors such as gallium, indium, tin, lead, and bismuth have drawn attention due to of their unique properties, e.g. resistance to photocorrosion. Here, we review the properties, synthesis and recent developments of post-transition metal oxide semiconductors for water splitting. Gallium nitride nanowall network enhances photocurrent density up to 28 mA/cm2. Alloys of gallium and indium, in the form of indium gallium nitride, show photocurrent density of 32 mA/cm2 with strong photon absorption and exceptional corrosion resistance in aqueous solutions.
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Abbreviations
- PTMO:
-
Post-transition metal oxide
- HVPE:
-
Hydride vapor-phase epitaxy
- MOCVD:
-
Metal–organic chemical vapor deposition
- MOVPE:
-
Metal–organic vapor-phase epitaxy
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Acknowledgements
The authors are grateful for the financial support by the Konsortium Kecemerlangan Penyelidikan (Grant No. 4L947) from the Ministry of Higher Education Malaysia, High Impact Research Grant (Grant No. 08G92) and Professional Development Research University Grant (No. 05E44) from Universiti Teknologi Malaysia.
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Hassan, N.S., Jalil, A.A., Khusnun, N.F. et al. Photoelectrochemical water splitting using post-transition metal oxides for hydrogen production: a review. Environ Chem Lett 20, 311–333 (2022). https://doi.org/10.1007/s10311-021-01357-x
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DOI: https://doi.org/10.1007/s10311-021-01357-x