Defect formation in epitaxial oxide dielectric layers due to substrate surface relief

Abstract

Defects were characterized in epitaxial (001) CeO₂ films deposited and planarizedin situ on patterned (001) LaAlO₃ substrates by ion beam assisted deposition (IBAD). A hill and valley structure with steps running parallel to the [100] LaAlO₃ axis was produced on the surface of the substrate by photolithography and ion beam etching prior to film deposition. A conformai epitaxial CeO₂ layer of ∼ 100 nm thickness was deposited on the heated substrate by e-beam evaporation. Lattice-matching between the e-beam film and the substrate was of the type: (001) CeO₂∥(001) LaAlO₃ and [110] CeO₂∥[100] LaAlO₃. Evaporative deposition of additional film onto the conformai layer was accompanied by bombardment with a 500 eV argon/oxygen ion beam to promotein situ planarization. Extreme lattice misfit for the orientation (001) CeO₂∥(001)LaAlO₃ and [001] CeO₂∥[001] LaAlO₃ caused formation of dislocations in the e-beam CeO₂ film in the vicinity of individual ledges in the substrate surface. Coherence of the CeO₂ film was locally lost in the step regions of the hill and valley structure. The large patterned steps, which are composed of numerous adjacent ledges in the LaAlO₃ surface, caused nucleation of CeO₂ with a tilt misalignment of up to ∼5‡ about the substrate [100]. Nucleation and growth of nonepitaxial CeO₂ crystallites was observed along the step regions of the film during the IBAD portion of deposition. Defect formation in the e-beam ceria layer due to substrate surface relief indicates that “lattice engineering≓ of multilayer epitaxial structures may not be possible when nonplanar surfaces are created during device fabrication. The IBAD CeO₂ layer was more defective than the conformai layer deposited without the impinging ion beam, even in the portions of the film where epitaxy was maintained throughout both layers.