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Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC

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Samples for transmission line model (TLM) and Hall measurements were fabricated on (0001) 4H-SiC implanted with nitrogen at 1 × 1018 cm−3, 4 × 1018 cm−3, 1 × 1019 cm−3, 4 × 1019 cm−3, and 1 × 1020 cm−3. Following high-temperature activation, the activation percentage dropped from ~90% to ~20%, and the Hall mobility decreased from ~100 cm2/V · s to ~20 cm2/V · s as the implant concentration increased from 1 × 1018 cm−3 to 1 × 1020 cm−3. The specific contact resistance as a function of Hall concentration is compared with published data for Ni contacts to epitaxial layers. The specific contact resistance as a function of activation temperature was also studied for two fixed implant concentrations of 5 × 1018 cm−3 and 1 × 1020 cm−3.

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Acknowledgement

This work was supported by the Auburn University Natural Resources Management and Development Institute.

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Authors and Affiliations

  1. Physics Department, Auburn University, Auburn, AL, 36849, USA

    M. Li, A. C. Ahyi, X. Zhu, Z. Chen, T. Isaacs-Smith & J. R. Williams

  2. Physics Department, Murray State University, Murray, KY, 42071, USA

    J. Crofton

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  1. M. Li
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  2. A. C. Ahyi
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  3. X. Zhu
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  4. Z. Chen
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  5. T. Isaacs-Smith
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  6. J. R. Williams
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  7. J. Crofton
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Correspondence to M. Li.

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Li, M., Ahyi, A.C., Zhu, X. et al. Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC. J. Electron. Mater. 39, 540–544 (2010). https://doi.org/10.1007/s11664-010-1128-1

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  • DOI: https://doi.org/10.1007/s11664-010-1128-1

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