Abstract
The properties of phosphorus-doped (Zn,Mg)O polycrystalline and epitaxial thin films are described. The as-deposited (Zn,Mg)O:P films are n type with high electron carrier density. High resistivity is induced in the films with moderate temperature annealing, which is consistent with suppression of the donor state and activation of the deep acceptor. The resistivity of the as-deposited and annealed film is an order of magnitude higher than similar samples with no Mg, consistent with a shift in the conduction band edge relative to the defect-related donor state. The capacitance-voltage characteristics of annealed metal/insulator/P-doped (Zn,Mg)O structures in which the (Zn,Mg)O is polycrystalline exhibit p-type polarity. In addition, multiple polycrystalline devices comprising n-type ZnO/P-doped (Zn,Mg)O thin-film junctions display asymmetric I–V characteristics that are consistent with the formation of a p-n junction at the interface, although the ideality factor is anomalously high.
Similar content being viewed by others
References
A.R. Hutson, Phys. Rev. 108, 222 (1957).
D.C. Look, J.W. Hemsky, and J.R. Sizelove, Phys. Rev. Lett. 82, 2552 (1999).
B.J. Jin, S.H. Bae, S.Y. Lee, and S. Im, Mater. Sci. Eng. B71, 301 (2000).
D.M. Hofmann, A. Hofstaetter, F. Leiter, Huijuan Zhou, F. Henecker, B.K. Meyer, S.B. Orlinskii, J. Schmidt, and P.G. Baranov, Phys. Rev. Lett. 88, 045504/1–4 (2002).
C.G. Van de Walle, Phys. Status Solidi B 229, 221 (2002).
S.F.J. Cox, E.A. Davis, P.J.C. King, J.M. Gil, H.V. Alberto, R.C. Vilao, J. Piroto Duarte, N.A. De Campos, and R.L. Lichti, J. Phys.: Condensed Matter 13, 9001 (2001).
C.G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).
G.F. Newmark, Materials Science and Engr. R21, 1 (1997).
D.B. Laks, C.G. Van de Walle, G.F. Neumark, and S.T. Pantelides, Appl. Phys. Lett. 63, 1375 (1993).
Y. Kanai, Jpn. J. Appl. Phys., Part 1 (Regular Papers & Short Notes) 30, 703 (1991).
Y. Kanai, Jpn. J. Appl. Phys., Part 1 (Regular Papers & Short Notes) 30, 2021 (1991).
J.A. Savage and E.M. Dodson, J. Mater. Sci. 4, 809 (1969).
A. Valentini, F. Quaranta, M. Rossi, and G. Battaglin, J. Vac. Sci Technol. A 9, 286 (1991).
A. Onedera, N. Tamaki, K. Jin, and H. Yamashita, Jpn. J. Appl. Phys. 36, 6008 (1997).
G. Weise, E.M. Fechner, G. Owsian, and D. Kraut, Thin Solid Films 32, 87 (1976).
P.H. Kasai, Phys. Rev. 130, 989 (1963).
H. Wolk, S. Deubler, D. Forkel, H. Foettinger, M. Iwatschenko-Borho, F. Meyer, M. Renn, W. Witthuhn, and R. Helbig, Mater. Sci. Forum Part 3 10–12, 863 (1986).
T. Nagata, T. Shimura, Y. Nakano, A. Ashida, N. Fujimura, and T. Ito, Jpn. J. Appl. Phys. Part 1 40, 5615 (2001).
T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999).
C.H. Park, S.B. Zhang, and Wei Su-Huai, Phys. Rev. B 66, 073202/1–3 (2002).
N.Y. Garces, N.C. Giles, L.E. Halliburton, G. Cantwell, D.B. Eason, D.C. Reynolds, and D.C. Look, Appl. Phys. Lett. 80, 1334 (2002).
K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys. 36, L1453 (1997).
Xin-Li Guo, H. Tabata, and T. Kawai, J. Cryst. Growth 223, 135 (2001).
K. Iwata, P. Fons, A. Yamada, K. Matsubara, and S. Niki, J. Cryst. Growth 209, 526 (2000).
Y. Yan, S.B. Zhang, and S.T. Pantelides, Phys. Rev. Lett. 86, 5723 (2001).
Jinzhong Wang, Guotong Du, Baijun Zhao, Xiaotian Yang, Yuantao Zhang, Yan Ma, Dali Liu, Yuchun Chang, Haisong Wang, Hongjun Yang, and Shuren Yang, J. Cryst. Growth 255, 293 (2003).
J.F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 83, 287 (2003).
X. Li, Y. Yan, T.A. Gessert, C.L. Perkins, D. Young, C. DeHart, M. Young, and T.J. Coutts, J. Vacuum Sci. Technol. A (Vacuum, Surfaces, and Films) 21, 1342 (2003).
T. Ohshima, T. Ikegami, K. Ebihara, J. Asmussen, and R.K. Thareja, Thin Solid Films 435, 49 (2003).
F. Jianguo Lu, Yinzhu Zhang, Zhizhen Ye, Lei Wang, Binghui Zhao, and Jinhyun Huang, Mater. Lett. 57, 3311 (2003)
Jingyun Huang, Zhizhen Ye, Hanhong Chen, Binghui Zhao, and Lei Wang, J. Mater. Sci. Lett. 22, 249 (2003).
D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
T. Aoki, Y. Hatanaka, and D.C. Look, Appl. Phys. Lett. 76, 3257 (2000).
Y.W. Heo, K. Ip, S.J. Park, S.J. Pearton, and D.P. Norton, Appl. Phys. A, 78, 53 (2004).
Y.R. Ryu, T.S. Lee, and H.W. White, Appl. Phys. Lett. 83, 87 (2003).
J. Kyu-Hyun Bang, Deuk-Kyu Hwang, Min-Chul Park, Young-Don Ko, Ilgu Yun, and Jae-Min Myoung, Appl. Surface Sci. 210, 177 (2003).
Y.R. Ryu, S. Zhu, J.D. Budai, H.R. Chandrasekhar, P.F. Miceli, and H.W. White, J. Appl. Phys. 88, 201 (2000).
Kyoung-Kook Kim, Hyun-Sik Kim, Dae-Kue Hwang, Jae-Hong Lim, and Seong-Ju Park, Appl. Phys. Lett. 83, 63 (2003).
Y.W. Heo, S.J. Park, K. Ip, S.J. Pearton, D.P. Norton, Appl. Phys. Lett. 83, 1128 (2003).
Y.W. Heo, K. Ip, S.J. Park, S.J. Pearton, and D.P. Norton, Appl. Phys. A, in press.
Y.W. Kwon, M. Jones, Y. Li, Y.W. Heo, and D.P. Norton, in preparation.
A.B.M. Almamun Ashrafi, I. Suemune, H. Kumano, and S. Tanaka, Jpn. J. Appl. Phys. 41, L1281 (2002).
E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (New York: John Wiley & Sons, 1982), pp. 492–580.
Y.W. Heo, Y.W. Kwon, Y. Li, S.J. Pearton, and D.P. Norton, Appl. Phys. Lett. 84, 3474 (2004).
J.M. Shah, Y.-L. Li, T. Gessmann, and E.F. Schubert, J. Appl. Phys. 94, 2627 (2003).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Heo, Y.W., Kwon, Y.W., Li, Y. et al. Properties of phosphorus-doped (Zn,Mg)O thin films and device structures. J. Electron. Mater. 34, 409–415 (2005). https://doi.org/10.1007/s11664-005-0120-7
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-005-0120-7