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Vapour growth of Cu and Li-doped single crystal zinc oxide in the resistivity range 50 to 103 ohm cm

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Abstract

A vapour growth technique is described by which copper and lithium-doped single crystal zinc oxide may be grown. Resistivity and drift mobility measurements are reported, together with some discussion on the effect of trapping on drift mobility.

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Authors and Affiliations

  1. Royal Radar Establishment, Malvern, Worcs, UK

    J. A. Savage & E. M. Dodson

Authors
  1. J. A. Savage
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  2. E. M. Dodson
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Savage, J.A., Dodson, E.M. Vapour growth of Cu and Li-doped single crystal zinc oxide in the resistivity range 50 to 103 ohm cm. J Mater Sci 4, 809–813 (1969). https://doi.org/10.1007/BF00551077

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  • DOI: https://doi.org/10.1007/BF00551077

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