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Oxygen Precipitation in Silicon

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  • First Online:
Defects and Impurities in Silicon Materials

Part of the book series: Lecture Notes in Physics ((LNP,volume 916))

Abstract

This chapter starts with the basic features of interstitial oxygen which are crucial for further considerations. Nucleation and growth of oxygen precipitates are described from the viewpoint of classical nucleation theory. The initial states of oxygen precipitation as suggested by ab initio calculation are also shown. Results about the impact of intrinsic point defects, doping, and co-doping on oxygen precipitation are presented. The most important methods for detection and characterization of oxygen precipitates with their possibilities and limitations are comprehensively described. A second focus of this chapter is directed towards the impact of grown-in oxygen precipitate nuclei in silicon wafers on creation of high quality defect denuded zones and oxygen precipitation during device processing. Conventional and modern methods of thermal processing and their impact on oxygen precipitation are discussed. Methods to determine the getter efficiency of oxygen precipitates and their results are described.

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Acknowledgments

The author would like to thank Dr. Dawid Kot very much for his engaged work in the investigation of oxygen precipitation during his work as a PhD student and as a post-doc at IHP. She also thanks her colleague Dr. Jaroslaw Dabrowski very much for this collaboration in the field of ab initio calculation. Many of the results presented here were obtained in common research projects between IHP and Siltronic AG and the author wants to thank all the colleagues from Siltronic AG for the fruitful collaboration. Especially acknowledged are Dr. Wilfried von Ammon, Dr. Andreas Sattler, Dr. Timo Müller, Dr. Ulrich Lambert, and Dr. Dieter Gräf. Many thanks also to Prof. Jan Vanhellemont for the inspiring discussions during his time at IMEC and Wacker Siltronic.

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    Gudrun Kissinger

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  1. Shizuoka Institute of Science and Technology, Fukuroi, Japan

    Yutaka Yoshida

  2. Nuclear solid state physics, Katholieke Universiteit Leuven (KU Leuven), Leuven, Belgium

    Guido Langouche

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Kissinger, G. (2015). Oxygen Precipitation in Silicon. In: Yoshida, Y., Langouche, G. (eds) Defects and Impurities in Silicon Materials. Lecture Notes in Physics, vol 916. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55800-2_6

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