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Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET

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Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS 2023)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 1067))

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Abstract

The mobility, µ of electrons shows oscillating behavior in an asymmetric GaAs/InxGa1-xAs Quantum Well (QW) Field Effect Transistor (FET) structure. So as to analyze µ, we take asymmetric doping concentrations, varying Nd1 in the substrate barrier and keeping Nd2 constant in surface barrier. The well widths W1 and W2 are also asymmetrically changed such that the sum (W1 + W2) remains constant. Resonance can be achieved for the subband energy states between the two QWs for a set of W1 and W2 by varying Nd1. A considerable variation is observed in spreading of subband wave functions near resonance that affect the subband mobilities through intersubband effects, thus causing a drop in µ. We show that dip in µ enhances by decreasing the difference in W1 and W2. The results of nonlinearity in µ can help in analyzing the characteristics of the QWFET devices near resonance.

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Authors and Affiliations

  1. Department of ECE, Veer Surendra Sai University of Technology, Burla, Odisha, 768018, India

    Sangita R. Panda & Manoranjan Pradhan

  2. Centre of Excellence in Nano Science and Technology for the Development of Sensors, Berhampur University, Berhampur, Odisha, 760007, India

    Trinath Sahu

  3. Electronics Center of Excellence, Bhubaneswar, Odisha, 751024, India

    Ajit Kumar Panda

Authors
  1. Sangita R. Panda
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  2. Manoranjan Pradhan
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  3. Trinath Sahu
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  4. Ajit Kumar Panda
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Corresponding author

Correspondence to Sangita R. Panda .

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Editors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, India

    Trupti Ranjan Lenka

  2. Department of Process Device and Compact Modeling, Prospicient Devices, Milpitas, CA, USA

    Samar K. Saha

  3. Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, ACT, Australia

    Lan Fu

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Panda, S.R., Pradhan, M., Sahu, T., Panda, A.K. (2024). Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET. In: Lenka, T.R., Saha, S.K., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. MNDCS 2023. Lecture Notes in Electrical Engineering, vol 1067. Springer, Singapore. https://doi.org/10.1007/978-981-99-4495-8_7

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  • DOI: https://doi.org/10.1007/978-981-99-4495-8_7

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