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Research on Testing Method of Low Voltage IGBT Module Parameter

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Recent Featured Applications of Artificial Intelligence Methods. LSMS 2020 and ICSEE 2020 Workshops (LSMS 2020, ICSEE 2020)

Part of the book series: Communications in Computer and Information Science ((CCIS,volume 1303))

Abstract

For the safe and rapid testing of multi-module power devices in complex systems, low-voltage testing is performed through a test experimental platform for insulated gate bipolar transistors, an inverter composed of IGBT modules, and the low-voltage experiment results confirm whether the power device works normally with rated conditions. A new method for rapidly detecting the IGBT modules is presented in this paper by monitoring inverter output, which uses low voltage input test. This paper proposes the overall design scheme, key function design and circuit principle analysis of this tester. This paper analyzes the test conditions for power devices during low-voltage testing, and provides a reference for low-voltage testing. The realization of this method has practical application value prospects for developing new products of power devices.

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Acknowledgments

This work is supported by Anhui Polytechnic University of Engineering Energy Internet Innovation Research Platform Support, Anhui Province Natural Science Foundation (1908085MF215), Pre-research of National Natural Science Fund Project of Anhui Polytechnic University (Xjky02201905).

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Faculty of Engineering, Western University, London, ON, Canada

    Pengcheng Niu

  2. Key Laboratory of Advanced Perception and Intelligent Control of High-End Equipment, Ministry of Education, Anhui Polytechnic University, Wuhu, China

    Pengcheng Niu, Wengen Gao & Jie Xu

Authors
  1. Pengcheng Niu
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  2. Wengen Gao
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  3. Jie Xu
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Corresponding author

Correspondence to Jie Xu .

Editor information

Editors and Affiliations

  1. Shanghai University, Shanghai, China

    Minrui Fei

  2. University of Leeds, Leeds, UK

    Kang Li

  3. Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China

    Zhile Yang

  4. Shanghai University, Shanghai, China

    Qun Niu

  5. Shanghai University, Shanghai, China

    Xin Li

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Niu, P., Gao, W., Xu, J. (2020). Research on Testing Method of Low Voltage IGBT Module Parameter. In: Fei, M., Li, K., Yang, Z., Niu, Q., Li, X. (eds) Recent Featured Applications of Artificial Intelligence Methods. LSMS 2020 and ICSEE 2020 Workshops. LSMS ICSEE 2020 2020. Communications in Computer and Information Science, vol 1303. Springer, Singapore. https://doi.org/10.1007/978-981-33-6378-6_11

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  • DOI: https://doi.org/10.1007/978-981-33-6378-6_11

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-33-6377-9

  • Online ISBN: 978-981-33-6378-6

  • eBook Packages: Computer ScienceComputer Science (R0)

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