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Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics

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HEMT Technology and Applications

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Abstract

This chapter reviews the recent progress in ultrawide bandgap AlGaN-channel-based high electron mobility transistors. AlGaN channel is the alternate substitute for the conventional GaN channel. In order to enhance the power handling capability of III-nitride-based heterostructure devices, improving the breakdown performance of the device without reduction in the current density is one of the simplest techniques. AlGaN-channel-based HEMTs favorably increase the critical electric field of the device. For the next-generation RF application, further improving the power handling capabilities of RF modules, AlGaN channel HEMT is the most optimistic applicant and it delivers four times larger GaN HEMT’s power performance and thus becoming the possible substitute to the GaN channel for the next generation power as well as RF devices and circuits. This chapter describes the polarization details of AlxGa1−xN/AlyGa1−yN heterostructure, and various device structure of AlGaN channel HEMTs and their static and dynamic characteristics.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, Andhra Pradesh, 531162, India

    P. Murugapandiyan & N. Ramkumar

  2. Department of Electronics and Communication Engineering, Seshadri Rao Gudlavalleru Engineering College, Gudlavalleru, Andhra Pradesh, 521356, India

    S. Ravi

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  1. P. Murugapandiyan
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  2. N. Ramkumar
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  3. S. Ravi
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Correspondence to P. Murugapandiyan .

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Editors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, Assam, India

    Trupti Ranjan Lenka

  2. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

    Hieu Pham Trung Nguyen

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Murugapandiyan, P., Ramkumar, N., Ravi, S. (2023). Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2165-0_1

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  • DOI: https://doi.org/10.1007/978-981-19-2165-0_1

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