Abstract
Spheroidal growth of silicon carbide (SiC) was observed by treating SiC grain in thermal arc plasma reactor/furnace followed by 4 h of in situ cooling under argon atmosphere. The plasma treatment of samples was carried out between 5 and 15 min. under Ar atmosphere. High microhardness and Young’s modulus values were found for plasma-treated SiC with spheroidal structure. Materials were evaluated by employing techniques such as XRD, XPS, micro Raman, FTIR, FESEM, TEM, EDS, microhardness, and Young’s modulus. Typical 15 min. plasma-treated SiC shows relatively high microhardness and Young’s modulus values of 3680 VHN and 470 GPa, respectively, than that of untreated one.
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Sahu, R.K., Dash, T., Mukherjee, V., Pradhan, S.K., Nayak, B.B. (2021). Growth of Spheroidal Silicon Carbide by Arc Plasma Treatment. In: Ghosal, P., Carter, C.B., Vinothkumar, K.R., Sarkar, R. (eds) Applications of Microscopy in Materials and Life Sciences. Springer Proceedings in Materials, vol 11. Springer, Singapore. https://doi.org/10.1007/978-981-16-2982-2_8
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DOI: https://doi.org/10.1007/978-981-16-2982-2_8
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