Abstract
Zinc oxide (ZnO) is a multifunctional material and flaunts optical, piezoelectric and semiconducting properties. ZnO thin film, as a basic layer, is used in micro-electro-mechanical systems (MEMS)-based devices for sensing and actuation purpose. ZnO-based micro-electro-mechanical structures such as cantilevers and membranes require single-side processing of Si wafer. Dry etching process (DRIE) is desired way to etch silicon. Preferably, wet chemicals like potassium hydroxide (KOH), ethylene diamine pyrochatechol (EDP) or tetramethylammonium hydroxide (TMAH) can also be used to etch silicon in a more economical way. However, ZnO film is not amicable to such chemicals and dissolves in no time. Therefore, the protection of ZnO thin film in etching solvent is a very crucial issue while releasing this kind of structures. The chapter presents silicon wet etching experiments in tetramethylammonium hydroxide (TMAH) solution using silicon-based organic polymer as a protective mask for the zinc oxide sputtered side of wafer since it is difficult to use and remove SiO2 or Si3N4 as an etching barrier, in multilayer structures. A comprehensive characterization of ZnO thin film is performed to demonstrate that structural, mechanical and electrical properties of thin film remain unaltered.
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Acknowledgements
The authors wish to acknowledge the DST-FIST support X-ray diffraction facility of the physics department, BITS Pilani. Dr Jitendra Singh is thanked for his help in the experimental work.
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Joshi, P., Akhtar, J. (2021). PDMS on ZnO Thin Film: A Mask for ZnO Thin Film in MEMS Fabrication. In: Khan, Z.H. (eds) Emerging Trends in Nanotechnology. Springer, Singapore. https://doi.org/10.1007/978-981-15-9904-0_9
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