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RRAM Device Characterizations and Modelling

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Emerging Non-volatile Memory Technologies

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Abstract

Resistive random access memory (RRAM) is one of the most promising candidate for future nanoscale nonvolatile memory. Extensive research efforts have been carried out to facilitate practical use of RRAM as data storage system. However, further improvements, such as reducing the operation voltage and current, suppressing the device variability, etc., are still needed for the commercialization of RRAM. To further optimize the device performance, physical mechanism of resistive switching behavior must be understood and physical model should be developed. This chapter summarizes the current physical mechanisms, which provides an atom view of the resistive switching behavior. Then we will discuss the materials characterization used to identify the origins of switching behaviors, including the high-resolution X-ray photoelectron spectroscopy (XPS), electron energy loss spectrum (EELS), in situ transmission electron microscopy (TEM) and so on. After that, Monte Carlo simulation of the dynamic resistive switching processes is presented, allowing for correlating the observed switching characteristics with the microcosmic physical processes. Besides, compact model for spice simulation of RRAM based circuit is discussed. Finally, we will introduce the electrical characterization of RRAM, such as retention, endurance, RTN and so on.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, No. 5 Yiheyuan Road, Beijing, 100871, P. R. China

    Peng Huang & Jinfeng Kang

  2. Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, P. R. China

    Bin Gao

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  1. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Wen Siang Lew

  2. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Gerard Joseph Lim

  3. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Putu Andhita Dananjaya

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Huang, P., Gao, B., Kang, J. (2021). RRAM Device Characterizations and Modelling. In: Lew, W.S., Lim, G.J., Dananjaya, P.A. (eds) Emerging Non-volatile Memory Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-15-6912-8_11

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