Abstract
The study investigates the ramifications of drain-doping engineering for all characteristics and parameters of a 2D TFET model. The paper suggests that three different structures of the device consist of splitted-drain region with different doping concentrations. Splitted-drain structures exhibit major reduction in ambipolar conduction due to increase in the tunneling width at the channel–drain junction. The structures are named according to the relative position of the drain: Splitted-Drain Single-Gate TFET (SD-SG TFET: drain in upper location), Mesial-Splitted-Drain Single-Gate TFET (MSD-SG TFET: drain in middle location), and Basal-Splitted-Drain Single-Gate TFET (BSD-SG TFET: drain in bottom location). All the fundamental device characteristics and parameters are analyzed for all the three structures, and their merits and drawback are recorded for optimal evaluation. All the simulations are done in Silvaco, Atlas.
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Goswami, B., Bhattacharjee, D., Bhattacharya, A., Sarkar, S.K. (2019). Drain-Doping Engineering and its Influence on Device Output Characteristics and Ambipolar Conduction on a Splitted-Drain TFET Model. In: Bera, R., Sarkar, S., Singh, O., Saikia, H. (eds) Advances in Communication, Devices and Networking. Lecture Notes in Electrical Engineering, vol 537. Springer, Singapore. https://doi.org/10.1007/978-981-13-3450-4_3
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DOI: https://doi.org/10.1007/978-981-13-3450-4_3
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