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Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

Ferroelectric field effect transistors (FeFETs) composed of P(VDF-TrFE) (Poly(Vinylidenefluoride-Tirfluoroethylene)) thin films and semiconductor substrates show excellent ferroelectric transistor characteristics. Since P(VDF-TrFE) has the ferroelectric polarization as large as those of oxide ferroelectric materials with much lower dielectric constant, it is an ideal material to build FeFETs with the combination to inorganic semiconductor materials. In addition, the process condition to form P(VDF-TrFE) is much milder to underlying semiconducting material compared to oxide ferroelectrics. Therefore, the improvement on the retention characteristics is expected by employing P(VDF-TrFE) ferroelectrics in FeFET instead of oxide ferroelectrics. The potential of P(VDF-TrFE) FeFET is discussed in this chapter.

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Notes

  1. 1.

    poly(3-hexyltiophene).

  2. 2.

    poly[2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene-vinylene].

  3. 3.

    poly(2-methoxy-5-(3′,7′-dimethylocthyloxy)-phenylenevinylene).

  4. 4.

    [6,6]-phenyl-C61-butyricacidmethylester.

  5. 5.

    p(fluorene-bithiophene).

References

  1. Y. Fujisaki, T. Kijima, H. Ishiwara, Appl. Phys. Lett. 78, 1285 (2001)

    Article  ADS  Google Scholar 

  2. Y. Tabuchi, B. Park, K. Aizawa, Y. Kawashima, K. Takahashi, K. Kato, Y. Arimoto, H. Ishiwara, Integr. Ferroelectr. 65, 125 (2004)

    Article  Google Scholar 

  3. S. Sakai, M. Takahashi, R. Ilangovan, Technical Digest International Electron Device Meeting (2004), p. 915

    Google Scholar 

  4. E. Tokumitsu, G. Fujii, H. Ishiwara, Appl. Phys. Lett. 75, 575 (1999)

    Article  ADS  Google Scholar 

  5. H. Kawai, Jpn. J. Appl. Phys. 18, 976 (1969)

    Google Scholar 

  6. R. Hasegawa, Y. Takahashi, Y. Chatani, H. Tadokoro, Polymer J. 3, 600 (1972)

    Article  Google Scholar 

  7. A.J. Lovinger, Development in Crystalline Polymers-1 (Applied Science Publishers, London, New Jersey, 1982), p. 195

    Book  Google Scholar 

  8. P. DeSantis, E. Giglio, A.M. Liquori, A. Ripamonti, J. Polymer Sci. A 1, 1383 (1963)

    Google Scholar 

  9. H. Horibe, M. Taniyama, J. Electrochem. Soc. 153, G119 (2006)

    Article  Google Scholar 

  10. A.J. Bur, J.D. Barnes, K.J. Wahlstrand, J. Appl. Phys. 59, 2345 (1986)

    Article  ADS  Google Scholar 

  11. H. Dvey-Aharon, T.J. Slucjin, P.L. Taylor, A.J. Hopfinger, Phys. Rev. B 21, 3700 (1980)

    Article  ADS  Google Scholar 

  12. J.D. Clark, P.L. Taylor, Phys. Rev. Lett. 49, 1532 (1928)

    Article  ADS  Google Scholar 

  13. F. Mospik, M.G. Broadhurst, J. Appl. Phys. 46, 4992 (1978)

    Google Scholar 

  14. H. Kakutani, J. Polymer Sic. 8, 1177 (1970)

    Google Scholar 

  15. M.G. Groadhurst, G.T. Davis, Topics in modern physics-electronics, 2nd edn. (Springer, Berlin, 1987), p. 285

    Google Scholar 

  16. C.K. Purvis, P.L. Taylor, Phys. Rev. B 26, 4547 (1982)

    Article  ADS  MathSciNet  Google Scholar 

  17. C.K. Purvis, P.L. Taylor, J. Appl. Phys. 54, 1021 (1983)

    Article  ADS  Google Scholar 

  18. R. Al-Jishi, P.L. Taylor, J. Appl. Phys. 57, 897 (1985)

    Article  ADS  Google Scholar 

  19. R. Al-Jishi, P.L. Taylor, J. Appl. Phys. 57, 902 (1985)

    Article  ADS  Google Scholar 

  20. H. Ogura, A. Chiba, Ferroelectrics 74, 247 (1987)

    Article  Google Scholar 

  21. H. Tanaka, H. Yukawa, T. Nishi, Macromolecules 21, 2469 (1988)

    Article  ADS  Google Scholar 

  22. T.R. Dargaville, J.M. Elliott, M. Celina, J. Polym. Sci. B 44, 3253 (2006)

    Article  Google Scholar 

  23. T.R. Dargaville, M. Celina, P.M. Chaplya, J. Polym. Sci. B 43, 1310 (2005)

    Article  Google Scholar 

  24. H. Xu, J. Appl. Polymer Sci. 80, 2259 (2001)

    Article  Google Scholar 

  25. M.P. Wenger, P.L. Almeida, P. Blanas, R.J. Shuford, D.K. Das-Gupta, Polym. Eng. Sci. 39, 483 (1999)

    Article  Google Scholar 

  26. S. Fujisaki, H. Ishiwara, Y. Fujisaki, Appl. Phys. Lett. 90, 162902 (2007)

    Article  ADS  Google Scholar 

  27. S. Fujisaki, Research on the application of organic ferroelectric P(VDF-TrFE) to non-volatile memories (Doctorial theses in Japanese, Japan, 2008)

    Google Scholar 

  28. S. Fujisaki, Y. Fujisaki, H. Ishiwara, I.E.E.E. Trans, IEEE Trans. Ultrason. Ferroelectric. Freq Control 54, 2592 (2007)

    Article  Google Scholar 

  29. A. Gerber, H. Kohlstedt, M. Fitsilis, R. Waser, T.J. Reece, S. Ducharme, E. Rije, J. Appl. Phys. 100, 024110 (2006)

    Article  ADS  Google Scholar 

  30. J.H. Kim, B.E. Park, H. Ishiwara, Jpn. J. Appl. Phys. 47, 8472 (2008)

    Article  ADS  Google Scholar 

  31. G.A. Salvatore, D. Bouvet, A.M. Ionescu, In Proceedings of IEEE International Electronic Device Meeting (2008), p. 1

    Google Scholar 

  32. T.J. Reece, S. Ducharme, A.V. Sorokin, M. Poulsen, App. Phys. Lett. 82, 142 (2003)

    Article  ADS  Google Scholar 

  33. S.H. Lim, A.C. Rastogi, S.B. Desu, J. Appl. Phys. 96, 5673 (2004)

    Article  ADS  Google Scholar 

  34. S. Fujisaki, Y. Fujiski, H. Ishiwara, Appl. Phys. Express 1, 081801 (2008)

    Article  ADS  Google Scholar 

  35. G.-G. Lee, E. Tokumitsu, S.-M. Yoon, Y. Fujisaki, J.-W. Yoon, H. Ishiwara, Appl. Phys. Lett. 99, 012901 (2011)

    Article  ADS  Google Scholar 

  36. C.H. Park, G. Lee, K.H. Lee, S. Im, B.H. Lee, M.M. Sung, Appl. Phys. Lett. 95, 153502 (2009)

    Article  ADS  Google Scholar 

  37. S.-M. Yoon, S.-H. Yang, S.-H. Ko Park, S.-W. Jung, D.-H. Cho, C.-E. Byun, S.-Y. Kang, C.-S. Hwang, B.-G. Yu, J Phys. D 42, 245101 (2009)

    Article  ADS  Google Scholar 

  38. R.C.G. Naber, J. Massolt, M. Spijkman, K. Asadi, P.W.M. Blom, D.M. de Leeuw, Appl. Phys. Lett. 90, 113509 (2007)

    Article  ADS  Google Scholar 

  39. R.C.G. Naber, C. Tanase, P.W.M. Blom, G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Sepas, D.M. de Leeuw, Nature Mater. 4, 243 (2005)

    Article  ADS  Google Scholar 

  40. G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Setaesh, M. de Leeuw, R.C.G. Naber, P.W.M. Blom, Appl. Phys. Lett. 87, 092903 (2005)

    Article  ADS  Google Scholar 

  41. K. Müller, I. Paloumpa, K. Henkel, D. Schmeisser, J. Appl. Phys. 98, 056104 (2005)

    Article  ADS  Google Scholar 

  42. K.N. Narayanan, Unni, Remi de Bettignies, Sylvie Dabos-Seignon and Jean-Michel Nunzi. Appl. Phys. Lett. 85, 1823 (2004)

    Article  ADS  Google Scholar 

  43. Raoul Schroeder, Leszek A. Majewski, Martin Grell, Adv. Mater. 16, 633 (2004)

    Article  Google Scholar 

  44. J. Karasawa, in Applications of Ferroelectrics 2007, International Symposium Application Ferroelectrics (2007), p. 41. doi:10.1109/ISAF.2007.4393161

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Authors and Affiliations

  1. YourFriend, Hachioji, Tokyo, 192-0916, Japan

    Yoshihisa Fujisaki

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  1. Yoshihisa Fujisaki
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Correspondence to Yoshihisa Fujisaki .

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Editors and Affiliations

  1. Electrical and Computer Engineering, University of Seoul Electrical and Computer Engineering, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Cen, Tokyo Institute of Technology Frontier Collaborative Research Cen, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Scie, Osaka University Graduate School of Engineering Scie, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science&Tech (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information & Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Fujisaki, Y. (2016). Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-0841-6_8

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  • DOI: https://doi.org/10.1007/978-94-024-0841-6_8

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