Ferroelectric-Gate Field Effect Transistor Memories

Device Physics and Applications

  • Byung-Eun Park
  • Hiroshi Ishiwara
  • Masanori Okuyama
  • Shigeki Sakai
  • Sung-Min Yoon

Part of the Topics in Applied Physics book series (TAP, volume 131)

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Introduction

  3. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors

    1. Front Matter
      Pages 21-21
    2. Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick
      Pages 57-72
  4. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors

  5. Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors

  6. Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors

  7. Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates

  8. Applications and Future Prospects

    1. Front Matter
      Pages 269-269

About this book

Introduction

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.   

Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.

This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.

The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Keywords

Ferroelectric-gate Field Effect Transistors Field Effect Transistors with flexible Inorganic Ferroelectric-gate FETs NAND-type Memory Circuits Non-memory Devices One-Transistor Type Organic Ferroelectric-gate FETs Si-Based Ferroelectric-gate FETs Thin film-Based Ferroelectric-gate FETs

Editors and affiliations

  • Byung-Eun Park
    • 1
  • Hiroshi Ishiwara
    • 2
  • Masanori Okuyama
    • 3
  • Shigeki Sakai
    • 4
  • Sung-Min Yoon
    • 5
  1. 1.Electrical and Computer EngineeringUniversity of Seoul Electrical and Computer EngineeringSeoulKorea (Republic of)
  2. 2.Frontier Collaborative Research CenTokyo Institute of Technology Frontier Collaborative Research CenYokohamaJapan
  3. 3.Graduate School of Engineering ScieOsaka University Graduate School of Engineering ScieOsakaJapan
  4. 4.National Institute of Advanced Industrial Science&Tech (AIST)TsukubaJapan
  5. 5.Advanced Materials Engineering for Information & ElectronicsKyunghee UniversityYonginKorea (Republic of)

Bibliographic information

  • DOI https://doi.org/10.1007/978-94-024-0841-6
  • Copyright Information Springer Science+Business Media Dordrecht 2016
  • Publisher Name Springer, Dordrecht
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-94-024-0839-3
  • Online ISBN 978-94-024-0841-6
  • Series Print ISSN 0303-4216
  • Series Online ISSN 1437-0859
  • About this book