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Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

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Abstract

Nonvolatile memory thin-film transistor using an organic ferroelectric gate insulator and oxide semiconductor active channel is proposed as a promising memory elements embedded onto the next-generation flexible and transparent electronic systems. In this chapter, some important technical issues for this device, such as device structure, process optimization and memory array integration, are extensively discussed. Feasible applications and remaining technological issues to be solved for practical applications are also reviewed.

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Authors and Affiliations

  1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-Do, 446-701, Republic of Korea

    Sung-Min Yoon

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  1. Sung-Min Yoon
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Editors and Affiliations

  1. Electrical and Computer Engineering, University of Seoul Electrical and Computer Engineering, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Cen, Tokyo Institute of Technology Frontier Collaborative Research Cen, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Scie, Osaka University Graduate School of Engineering Scie, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science&Tech (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information & Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Yoon, SM. (2016). Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-0841-6_10

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  • DOI: https://doi.org/10.1007/978-94-024-0841-6_10

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