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Active Region Part B. Internal Quantum Efficiency

  • Chapter
III-Nitride Based Light Emitting Diodes and Applications

Part of the book series: Topics in Applied Physics ((TAP,volume 126))

Abstract

In the first part, we introduced experimental results of the internal quantum efficiency (IQE) droop depending on temperature in both the electroluminescence and the resonant photoluminescence. The IQE droop mechanisms ever reported are reviewed. An inherent origin of the efficiency droop is suggested to be the saturation of the radiative recombination rate in the InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. The degree of saturation is largely influenced by operating temperature and the effective active volume. Although the saturation of the radiative recombination rate is the common origin of the IQE droop, the shapes of the IQE versus current, i.e. the IQE droop curve, vary with the dominant nonradiative recombination process. In the second part, we have reviewed the IQE measurement methods theoretically as well as experimentally. A simple IQE estimation method based on the constant ABC model in the carrier rate equation is introduced in terms of its convenience and application limitation. Other methods have been also reviewed by focusing on all-optical methods such as the temperature-dependent photoluminescence (TDPL) and the temperature-dependent time-resolved photoluminescence (TD-TRPL) methods.

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Authors and Affiliations

  1. Hanyang University ERICA Campus, Ansan, Gyeonggi-do, Korea

    Jong-In Shim

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  1. Jong-In Shim
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Editors and Affiliations

  1. Materials Science & Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, 136-713, Korea, Republic of (South Korea)

    Tae-Yeon Seong

  2. Electrical Engineering, Yale University, Prospect Street 15, New Haven, 06520, Connecticut, USA

    Jung Han

  3. Electrical Engineering & Comp. Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan

    Hiroshi Amano

  4. Electrical and Computer Engineering, Virginia Commonwealth University, W Main St 601, Richmond, 23284-3072, Virginia, USA

    Hadis Morkoc

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© 2013 Springer Science+Business Media Dordrecht

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Shim, JI. (2013). Active Region Part B. Internal Quantum Efficiency. In: Seong, TY., Han, J., Amano, H., Morkoc, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 126. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-5863-6_7

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