III-Nitride Based Light Emitting Diodes and Applications

  • Tae-Yeon Seong
  • Jung Han
  • Hiroshi Amano
  • Hadis Morkoc
Part of the Topics in Applied Physics book series (TAP, volume 126)

Table of contents

  1. Front Matter
    Pages I-XIII
  2. Jeff Y. Tsao, Jonathan J. Wierer Jr., Lauren E. S. Rohwer, Michael E. Coltrin, Mary H. Crawford, Jerry A. Simmons et al.
    Pages 11-26
  3. Michael Kneissl, Jens Rass, Lukas Schade, Ulrich T. Schwarz
    Pages 83-119
  4. Elison Matioli, Claude Weisbuch
    Pages 121-152
  5. M. Meneghini, G. Meneghesso, E. Zanoni
    Pages 197-229
  6. Ja-Yeon Kim, Tak Jeong, Sang Hern Lee, Hwa Sub Oh, Hyung Jo Park, Sang-Mook Kim et al.
    Pages 271-290
  7. Rong-Jun Xie, Naoto Hirosaki
    Pages 291-326
  8. Wen-Yung Yeh, Hsi-Hsuan Yen, Kuang-Yu Tai, Pei-Ting Chou
    Pages 327-348
  9. Yoshi Ohno
    Pages 349-371
  10. Robert F. Karlicek Jr.
    Pages 373-383
  11. Back Matter
    Pages 385-390

About this book

Introduction

Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Keywords

High Voltage LEDs III-Nitride Based Semiconductors Integrated Circuits LED Laser Diodes Light Emitting Diodes Packaging Packaging Technology Quantum efficiency Solid State Lighting

Editors and affiliations

  • Tae-Yeon Seong
    • 1
  • Jung Han
    • 2
  • Hiroshi Amano
    • 3
  • Hadis Morkoc
    • 4
  1. 1.Materials Science & EngineeringKorea UniversitySeoulKorea, Republic of (South Korea)
  2. 2.Electrical EngineeringYale UniversityNew HavenUSA
  3. 3.Electrical Engineering & Comp. ScienceNagoya UniversityNagoyaJapan
  4. 4.Electrical and Computer EngineeringVirginia Commonwealth UniversityRichmondUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-94-007-5863-6
  • Copyright Information Springer Science+Business Media Dordrecht 2013
  • Publisher Name Springer, Dordrecht
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-94-007-5862-9
  • Online ISBN 978-94-007-5863-6
  • Series Print ISSN 0303-4216
  • Series Online ISSN 1437-0859
  • About this book