Abstract
Layered chalcogenide materials exhibit a wide range of physical properties associated with their quasi-2D nature and have been studied extensively since the second half of the twentieth century. Following the discovery of graphene, the ability to isolate individual monolayer of these material has recently opened up numerous avenues for probing various physical effects in the ultimate 2D confinement limit. Monolayers of group 6 transition metal dichalcogenides are an attractive platform for studying many-body effects, non-linear optics, and valley physics. Along with other emerging 2D chalcogenides, they offer unique opportunities for realizing novel devices and their technological implementations. Here we review the fundamental properties of various semiconducting chalcogenide nanosheets and their heterostructures with emphasis on the electronic structure and optical properties of Mo- and W-basedĀ dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2). We discuss the current understanding on the the layer-dependent energy dispersion and and its optical signatures in these material systems. We further discuss the strong excitonic effects and review recent experimental efforts in estimating exciton binding energy using various optical and opto-electrical approaches.
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Abbreviations
- 1D:
-
One-dimensional
- 2D:
-
Two-dimensional
- 2P-PLE:
-
Two-photon photoluminescence excitation
- ADF:
-
Annular dark field
- ALD:
-
Atomic layer deposition
- ARPES:
-
Angle-resolved photoemission spectroscopy
- BLG:
-
Bilayer graphene
- CBM:
-
Conduction band minimum
- CDW:
-
Charge density wave
- CL:
-
Cathodoluminescence
- CVD:
-
Chemical vapor deposition
- CVT:
-
Chemical vapor transport
- DFT:
-
Density functional theory
- DoS:
-
Density of state
- dR:
-
Differential reflectance
- HOPG:
-
Highly oriented pyrolytic graphite
- jDoS:
-
Joint density of states
- MBE:
-
Molecular beam epitaxy
- MX2 :
-
Metal atoms (M) and chalcogen atoms (X)
- IR:
-
Infra-red
- UV:
-
Ultra-violet
- PL:
-
Photoluminescence
- PLE:
-
Photoluminescence excitation spectroscopy
- SHG:
-
Second harmonic generation spectroscopy
- STEM:
-
Scanning transmission electron microscopy
- STM:
-
Scanning tunneling microscopy
- STS:
-
Scanning tunneling spectroscopy
- TA:
-
Transient absorption
- TMD:
-
Transition metal dichalcogenide
- VBM:
-
Valence band maximum
- XPS:
-
X-ray photoelectron spectroscopy
References
Wilson AD, Yoffe JA (1969) The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv Phys 18:193ā335
Murray RB, Bromley RA, Yoffe AD (1972) The band structures of some transition metal dichalcogenides. II. Group IVA; octahedral coordination. J Phys C Sol Stat Phys 5:746
Bromley RA, Murray RB, Yoffe AD (1972) The band structures of some transition metal dichalcogenides. III. Group VIA: trigonal prism materials. J Phys C Sol Stat Phys 5:759
Liang WY (1973) Optical anisotropy in layer compounds. J Phys C Solid Stat Phys 6:551ā565
LĆ©vy F (1979) Physics and chemistry of materials with layered structures: intercalated layered materials. Reidel, Dordrecht
Somoano RB, Hadek V, Rembaum A (1973) Alkali metal intercalates of molybdenum disulfide. J Chem Phys 58:697
Woollam JA, Somoano RB (1976) Superconducting critical fields of alkali and alkaline-earth intercalates of MoS2. Phys Rev B 13:3843
Hasan MZ, Kane CL (2010) Topological insulators. Rev Mod Phys 82:3045
Butler SZ et al (2013) Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7:2898ā2926
Kasowski RV (1973) Band structure of MoS2 and NbS2. Phys Rev Lett 30:1175
LebĆØgue S, Eriksson O (2009) Electronic structure of two-dimensional crystals from ab initio theory. Phys Rev B 79:115409
Hu KH et al (2009) Tribological properties of molybdenum disulfide nanosheets by monolayer restacking process as additive in liquid paraffin. Tribol Int 42:33ā39
Lipatov A et al (2015) Few-layered titanium trisulfide (TiS3) field-effect transistors. Nanoscale 7:12291ā12296
Zolyomi V, Drummond ND, Falāko VI (2003) Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides. Phys Rev B 87:195403
Malone BD, Kaxiras E (2013) Quasiparticle band structures and interface physics of SnS and GeS. Phys Rev B 87:245312
Buscema M et al (2015) Photocurrent generation with two-dimensional van der Waals semiconductors. Chem Soc Rev 44:3691ā3718
Gomes LC, Carvalho A (2015) Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure. Phys Rev B 92:085406
Consadori F, Frindt RF (1970) Crystal size effects on the exciton absorption spectrum of WSe2. Phys Rev B 2:4893ā4896
Novoselov KS et al (2005) Electric field effect in atomically thin carbon films. Science 306:666
Chhowalla M et al (2013) The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat Chem 5:263ā275
Wang QH et al (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7:699ā712
Bhimanapati GR et al (2015) Recent advances in two-dimensional materials beyond graphene. ACS Nano 9:11509ā11539
Gupta A, Sakthivel T, Seal S (2015) Recent development in 2D materials beyond graphene. Prog Mat Sci 73:44ā126
Splendiani A et al (2010) Emerging photoluminescence in monolayer MoS2. Nano Lett 10:1271ā1275
Mak KF et al (2010) Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett 105:136805
Zeng H et al (2012) Valley polarization in MoS2 monolayers by optical pumping. Nat Nanotechnol 7:490ā493
Mak KF et al (ed) (2012) Control of valley polarization in monolayer MoS2 by optical helicity. Nat Nanotechnol 7:494ā498
Malard AM et al (2013) Observation of intense second harmonic generation from MoS2 atomic crystals. Phys Rev B 87:201401
Li Y et al (2013) Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation. Nano Lett 13:3329ā3333
Kumar N et al (2013) Second harmonic microscopy of monolayer MoS2. Phys Rev B 87:161403
Wu W et al (2014) Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature 514:470ā474
Zhu H et al (2015) Observation of piezoelectricity in free-standing monolayer MoS2. Nat Nanotechnol 10:151ā155
Zhang C et al (2014) Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states and edge band bending. Nano Lett 14:2443ā2447
Chernikov A et al (2014) Exciton binding energy and nonhydrogenic rydberg series in monolayer WS2. Phys Rev Lett 113:076802
Ye Z et al (2014) Probing excitonic dark states in single-layer tungsten disulphide. Nature 513:214ā218
Ye JT et al (2012) Superconducting dome in a gate-tuned band insulator. Science 30:1193ā1196
Geim AK, Grigorieva IV (2013) Van der Waals heterostructures. Nature 499:419ā425
Lee JU et al (2016) Raman signatures of polytypism in molybdenum disulfide. ACS Nano 10:1948ā1953
Brown BE (1966) The crystal structures of WTe2 and high-temperature MoTe2. Acta Cryst 20:268ā274
Vellinga MB, Jonge R, Haas C (1970) Semiconductor to metal transition in MoTe2. J Solid Stat Chem 2:299ā302
Coehoorn R, Haas C, de Groot RA (1987) Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps. Phys Rev B 35:6203ā6206
Novoselov KS et al (2005) Two-dimensional atomic crystals. PNAS 102:10451
Schafer H (1964) Chemical transport reactions. Academic Press, New York
Koma A, Sunouchi K, Miyajima T (1984) Fabrication and characterization of heterostructures with subnanometer thickness. Microelectron Eng 2:129ā136
Zheng J et al (2014) High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide. Nature Commun 5:2995
Nicolosi V et al (2013) Liquid exfoliation of layered materials. Science 340:6139
Amara KK et al (2014) Wet chemical thinning of molybdenum disulfide down to its monolayer. APL Mater 2:092509
Huang Y et al (2013) An innovative way of etching MoS2: characterization and mechanistic investigation. Nano Res 6:200
Liu Y et al (2013) Layer-by-layer thinning of MoS2 by plasma. ACS Nano 7:4202
Castellanos-Gomez A et al (2012) Laser-thinning of MoS2: on demand generation of a single-layer semiconductor. Nano Lett 12:3187
Altavilla C, Sarno M, Ciambelli P (2011) A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2@oleylamine (M=Mo, W). Chem Mater 23:3879
Tan LK et al (2014) Atomic layer deposition of a MoS2 film. Nanoscale 6:10584
Zhan Y et al (2012) Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8:966
Liu K-K et al (2012) Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett 12:1538
Lee Y-H et al (2012) Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv Mater 24:2320
Amani M et al (2013) Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Appl Phys Lett 102:193107
van der Zande AM et al (2013) Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat Mater 12:554
Wang H et al (2012) Integrated circuits based on bilayer MoS2 transistors. Nano Lett 12:4674
Najmaei S et al (2013) Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat Mater 12:754
Yu Y et al (2013) Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci Rep 3:1866
Gong C et al (2013) Metal contacts on physical vapor deposited monolayer MoS2. ACS Nano 7:11350
Liu Y et al (2014) Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique. Nano Lett 14:4682
Liu H et al (2013) Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Lett 13:2640
Liu B et al (2014) High-performance chemical sensing using schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors. ACS Nano 8:5304
Najmaei S et al (2014) Electrical transport properties of polycrystalline monolayer molybdenum disulfide. ACS Nano 8:7930
Schmidt H et al (2014) Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett 14:1909
Dumcenco D et al (2015) Large-area epitaxial monolayer MoS2. ACS Nano 9:4611ā4620
Zhu W et al (2014) Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat Commun 5:3087
Wang X et al (2014) Chemical vapor deposition growth of crystalline monolayer MoSe2. ACS Nano 8:5125
Shaw JC et al (2014) Chemical vapor deposition growth of monolayer MoSe2 and nanosheets. Nano Res 7:1
Zhang Y et al (2013) Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary. ACS Nano 7:8963
Sirlina T et al (2000) Study on preparation, growth mechanism, and optoelectronic properties of highly oriented WSe2 thin films. J Mater Res 15:2636
Huang J-K et al (2014) Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 8:923
Gong Y et al (2014) Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett 14:442
Lin Y-C et al (2014) Properties of individual dopant atoms in single-layer MoS2: atomic structure, migration, and enhanced reactivity. Adv Mater 26:2857
Hong J et al (2015) Exploring atomic defects in molybdenum disulphide monolayers. Nat Commun 6:6293
Zhou W et al (2013) Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett 13:2615
Lu C-P et al (2014) Bandgap, mid-gap states, and gating effects in MoS2. Nano Lett 14:4628
Tongay S et al (2013) Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons. Sci Rep 3:2657
Radisavljevic B et al (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6:147
Kim S et al (2012) High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat Commun 3:1011
Baugher BWH et al (2013) Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett 13:4212
Wang Z et al (2013) Hopping transport through defect-induced localized states in molybdenum disulphide. Nat Commun 4:2642
Yu Z et al (2014) Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun 5:5290
Liu G-B et al (2015) Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. Chem Soc Rev 44:2643ā2663
Zhao W et al (2013) Evolution ofĀ electronic structure in atomically thin sheets of WS2Ā and WSe2.Ā ACS Nano 7:791ā797
Tongay S et al (2012) Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. Nano Lett 12:5576ā5580
Zhang Y et al (2014) Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat Nanotechnol 9:111ā115
Jin W et al (2013) Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys Rev Lett 111:106801
Zeng H et al (2013) Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides. Sci Rep 3:1608
Zhang C et al (2015) Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer WSe2. Nano Lett 15:6494ā6500
Lezama IG et al (2015) Indirect-to-direct band gap crossover in few-layer MoTe2. Nano Lett 15:2336ā2342
Schmidt H, Giustiniano F, Eda G (2015) Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects. Chem Soc Rev 44:7715ā7736
Zhao W, Mendes Ribeiro R, Eda G (2015) Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets. Acc Chem Res 48:91ā99
Yoffe AD (2002) Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems. Adv Phys 51:799ā890
Cheiwchanchamnangij T, Lambrecht WRL (2012) Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2. Phys Rev B 85:205302
Tongay S et al (2013) Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett 13:2831ā2836
Komsa HP, Krasheninnikov AV (2012) Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles. Phys Rev B 86:241201
Yu H et al (2015) Valley excitons in two-dimensional semiconductors. Natl Sci Rev 2:57ā70
Xu X et al (2014) Spin and pseudospins in layered transition metal dichalcogenides. Nat Phys 10:343ā350
Zhao W et al (2013) Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2. Nano Lett 13:5627ā5634
Mak KF et al (2013) Tightly bound trions in monolayer MoS2. Nat Mater 12:207ā211
You Y et al (2015) Observation of biexcitons in monolayer WSe2. Nat Phys 11:477ā481
Jones AM et al (2013) Optical generation of excitonic valley coherence in monolayer WSe2. Nat Nanotechnol 8:634ā638
Ross JS et al (2013) Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat Commun 4:1474
Castellanos-Gomez A et al (2013) Local strain engineering in atomically thin MoS2. Nano Lett 13:5361
Conley HJ et al (2013) Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett 13:3626
Qiu DY, da Jornada FH, Louie SG (2013) Optical spectrum of MoS2: many-body effects and diversity of exciton states. Phys Rev Lett 111:216805
Beal AR, Hughes HP (1979) Kramers-Kronig analysis of the reflectivity spectra of 2H-MoS2, 2H-MoSe2 and 2H-MoTe2. J Phys C Solid Stat Phys 12:881
Carvalho A, Ribeiro RM, Castro Neto AH (2013) Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides. Phys Rev B 88:115205
Kumar R, Verzhbitskiy I, Eda G (2015) Strong optical absorption and photocarrier relaxation in two-dimensional semiconductors. IEEE J Quant Elec 51:0600206
Britnell L et al (2013) Strong light-matter interactions in heterostructures of atomically thin films. Science 340:1311ā1314
Feng J et al (2012) Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat Photon 6:865ā871
Nair RR et al (2008) Fine structure constant defines visual transparency of graphene. Science 320:1308
Yun WS et al (2012) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M=Mo, W; X=S, Se, Te). Phys Rev B 85:033305
Kuc A, Zibouche N, Heine T (2011) Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Phys Rev B 83:245213
Ramasubramaniam A, Naveh D, Towe E (2011) Tunable band gaps in bilayer transition-metal dichalcogenides. Phys Rev B 84:205325
Klein A et al (2001) Electronic band structure of single-crystal and single-layer WS2: influence of interlayer van der Waals interactions. Phys Rev B 64:205416
Ugeda MM et al (2014) Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. Nat Mater 13:1091ā1095
Chernikov A et al (2015) Electrical tuning of exciton binding energies in monolayer WS2. Phys Rev Lett 115:126802
Yuan H et al (2013) Zeeman-type spin splitting controlled by an electric field. Nat Phys 9:563ā569
Ruppert C, Aslan OB, Heinz TF (2014) Optical properties and band gap of single- and few-layer MoTe2 crystals. Nano Lett 14:6231ā6236
Py MA, Haering RR (1983) Structural destabilization induced by lithium intercalation in MoS2 and related compounds. Can J Phys 61:76ā84
Voiry D, Mohite A, Chhowalla M (2015) Phase engineering of transition metal dichalcogenides. Chem Soc Rev 44:2702ā2712
Eda G et al (2011) Photoluminescence from chemically exfoliated MoS2. Nano Lett 11:5111ā5116
Joensen P, Frindt RF, Morrison SR (1986) Single-layer MoS2. Mater Res Bull 21:457ā461
Papageorgopoulos CA, Jaegermann W (1995) Li intercalation across and along the van der Waals surfaces of MoS2 (0001). Surf Sci 338:83ā93
Li LJ et al (2016) Controlling many-body states by the electric-field effect in a two-dimensional material. Nature 529:185ā189
Zhang C et al (2014) Absorption of light by excitons and trions in monolayers of metal dichalcogenide MoS2: experiments and theory. Phys Rev B 89:205436
Nguyen DT et al (2011) Elastic exciton-exciton scattering in photoexcited carbon nanotubes. Phys Rev Lett 107:127401
Qiu DY, da Jornada FH, Louie SG (2015) Erratum: optical spectrum of MoS2: many-body effects and diversity of exciton states. Phys Rev Lett 115:119901
Miller RC et al (1981) Observation of the excited level of excitons in GaAs quantum wells. Phys Rev B 24:1134
Greene RL, Bajaj KK, Phelps DE (1984) Energy levels of Wannier excitons in GaAsāGa1āxAlxAs quantum-well structures. Phys Rev B 29:1807
Beal AR, Knights JC, Liang WY (1972) Transmission spectra of some transition metal dichalcogenides. II. Group VIA: trigonal prismatic coordination. Phys C Sol Stat Phys 5:3540ā3551
Klots AR et al (2014) Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. Sci Rep 4:6608
Hill HM et al (2015) Observation of excitonic rydberg states in monolayer MoS2 and WS2 by photoluminescence excitation spectroscopy. Nano Lett 13:2992ā2997
Zhu B, Chen X, Cui X (2015) Exciton binding energy of monolayer WS2. Sci Rep 5:9218
Berkelbach TC, Hybertsen MS, Reichman DR (2013) Theory of neutral and charged excitons in monolayer transition metal dichalcogenides. Phys Rev B 88:045318
Kheng K et al (1993) Observation of negatively charged excitons Xā in semiconductor quantum wells. Phys Rev Lett 71:1752
Finkelstein G, Shtrikman H, Bar-Joseph I (1995) Optical spectroscopy of a two-dimensional electron gas near the metal-insulator transition. Phys Rev Lett 74:976
Sergeev RA, Suris RA (2001) Ground-state energy of Xā and X+ trions in a two-dimensional quantum well at an arbitrary mass ratio. Phys Sol Stat 43:746ā751
Thilagam A (1997) Two-dimensional charged-exciton complexes. Phys Rev B 55:7804ā7808
Klingshirn CF (2007) Semiconductor Optics. Springer, Berlin
He Z et al (2016) Biexciton formation in bilayer tungsten disulfide. ACS Nano 10:2176ā2183
Mai C et al (2014) Many-body effects in valleytronics: direct measurement of valley lifetimes in single-layer MoS2. Nano Lett 14:202ā206
Sie EJ et al (2015) Intervalley biexcitons and many-body effects in monolayer MoS2. Phys Rev B 92:125417
Mitioglu AA et al (2013) Optical manipulation of the exciton charge state in single-layer tungsten disulfide. Phys Rev B 88:245403
Plechinger G et al (2015) Identification of excitons, trions and biexcitons in single-layer WS2. Phys Stat Sol RRL 9:457ā467
Shang J et al (2015) Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor. ACS Nano 9:647ā655
Liu H et al (2014) Dense network of one-dimensional midgap metallic modes in monolayer MoSe2 and their spatial undulations. Phys Rev Lett 113:066105
He K et al (2014) Tightly bound excitons in monolayer WSe2. Phys Rev Lett 113:026803
Wang G et al (2015) Giant enhancement of the optical second-harmonic emission of WSe2 monolayers by laser excitation at exciton resonances. Phys Rev Lett 114:097403
Yang J et al (2015) Robust excitons and trions in monolayer MoTe2. ACS Nano 9:6603ā6609
Zhu X et al (1995) Exciton condensate in semiconductor quantum well structures. Phys Rev Lett 74:1633
Butov LV et al (2002) Towards Bose-Einstein condensation of excitons in potential traps. Nature 417:47ā52
Fox AM et al (1992) Suppression of the observation of Stark ladders in optical measurements on superlattices by excitonic effects. Phys Rev B 46:15365
Kato Y et al (1994) Observation of the Stark effect in coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation spectroscopy. J Appl Phys 75:7476
Schuller JA et al (2013) Orientation of luminescent excitons in layered nanomaterials. Nat Nanotechnol 8:271ā276
Jones AM et al (2014) Spinālayer locking effects in optical orientation of exciton spin in bilayer WSe2. Nat Phys 10:130ā134
Fang H et al (2014) Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. PNAS 111:6198ā6202
Rivera P et al (2015) Observation of long-lived interlayer excitons in monolayer MoSe2āWSe2 heterostructures. Nat Commun 6:6242
Rivera P et al (2016) Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. Science 351:688ā691
Li G, Zhu R, Yang Y (2012) Polymer solar cells. Nat Photonics 6:153ā161
KoÅmider K, FernĆ”ndez-Rossier J (2013) Electronic properties of the MoS2āWS2 heterojunction. Phys Rev B 87:075451
ĆzƧelik VO et al (2016) Band alignment of 2D semiconductors for designing heterostructures with momentum space matching. Phys Rev BĀ 94:035125
Kang J et al (2013) Band offsets and heterostructures of two-dimensional semiconductors. Appl Phys Lett 102:012111
Terrones H, Lopez-Urias F, Terrones M (2013) Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Sci Rep 3:1549
Yu H et al (2015) Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers. Phys Rev Lett 115:187002
Lin Y-C et al (2015) Single-layer ReS2: two-dimensional semiconductor with tunable in-plane anisotropy. ACS Nano 9:11249ā11257
Dai J, Zeng XC (2015) Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility. Angew Chem Int Ed 54:7572ā7576
Rodin AS et al (2016) Valley physics in tin (II) sulfide. Phys Rev B 93:045431
Tritsaris GA, Malone BD, Kaxiras E (2013) Optoelectronic properties of single-layer, double-layer, and bulk tin sulfide: a theoretical study. J Appl Phys 113:233507
Island JO et al (2015) TiS3 transistors with tailored morphology and electrical properties. Adv Mater 27:2595ā2601
Hu P et al (2012) Synthesis of few-layer GaSe nanosheets for high performance photodetectors. ACS Nano 6:5988ā5994
Ramakrishna Reddy KT, Koteswara Reddy N, Miles RW (2006) Photovoltaic properties of SnS based solar cells. Sol Energy Mater Sol Cells 90:3041ā3046
Schwarz S et al (2014) Two-dimensional metalāchalcogenide films in tunable optical microcavities. Nano Lett 14:7003ā7008
Zhao L-D et al (2014) Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals. Nature 508:373ā377
Li X et al (2014) Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse. Sci Rep 4:5497
Hu P et al (2013) Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett 13:1649ā1654
Liu F et al (2014) High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano 8:752ā760
Sanchez-Royo JF et al (2002) Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe. Phys Rev B 65:115201
Zhang HL, Hennig RG (2003) Single-layer group-III monochalcogenide photocatalysts for water splitting. Chem Mater 25:3232ā3238
Jung CS et al (2015) Red-to-ultraviolet emission tuning of two-dimensional gallium sulfide/selenide. ACS Nano 9:9585ā9593
Ma Y et al (2013) Tunable electronic and dielectric behavior of GaS and GaSe monolayers. Phys Chem Chem Phys 15:7098ā7105
Li H et al (2014) Growth of alloy MoS2xSe2(1āx) nanosheets with fully tunable chemical compositions and optical properties. J Am Chem Soc 136:3756ā3759
Dumcenco DO et al (2013) Visualization and quantification of transition metal atomic mixing in Mo1āxWxS2 single layers. Nat Commun 4:1351
Zhang M et al (2014) Two-dimensional molybdenum tungsten diselenide alloys: photoluminescence, raman scattering, and electrical transport. ACS Nano 8:7130ā7137
Tongay S et al (2014) Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat Commun 5:3252
Zhao H et al (2015) Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Res 8:3651ā3661
Aslan OB et al (2016) Linearly polarized excitons in single- and few-layer ReS2 crystals. ACS Photon 3:96ā101
Chenet DA et al (2015) In-plane anisotropy in mono- and few-layer ReS2 probed by Raman spectroscopy and scanning transmission electron microscopy. Nano Lett 15:5667ā5672
Zhong H-X et al (2015) Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayerĀ distortedĀ 1TĀ diamond-chain structuresĀ ReS2Ā andĀ ReSe2. Phys Rev B 92:115438
Jin Y, Li X, Yang J (2015) Single layer of MX3 (M=Ti, Zr; X=S, Se, Te): a new platform for nano-electronics and optics. Phys Chem Chem Phys 17:18665ā18669
Gorlova I et al (2012) Nonlinear conductivity of quasi-one-dimensional layered compound TiS3. Physica B 407:1707
Zaitsev-Zotov SV, Pokrovskii V Ya, Monceau P (2001) Transition to 1D conduction with decreasing thickness of the crystals of TaS3 and NbSe3 quasi-1D conductors. J Exp Theor Phys Lett 73:25ā27
Slot E et al (2004) One-dimensional conduction in charge-density-wave nanowires. Phys Rev Lett 93:176602
Island JO et al (2014) Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors. Adv Opt Mat 2:641ā645
Island JO et al (2016) Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties. Sci Rep 6:22214
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Verzhbitskiy, I., Eda, G. (2017). Chalcogenide Nanosheets: Optical Signatures of Many-Body Effects and Electronic Band Structure. In: Nakato, T., Kawamata, J., Takagi, S. (eds) Inorganic Nanosheets and Nanosheet-Based Materials. Nanostructure Science and Technology. Springer, Tokyo. https://doi.org/10.1007/978-4-431-56496-6_5
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DOI: https://doi.org/10.1007/978-4-431-56496-6_5
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