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Silicon Nitride in Compound Semiconductor Field Effect Transistors

  • Chapter
Si Silicon

Part of the book series: Si. Silicium. Silicon (System-Nr. 15) ((2074,volume S-i / B / 1-5 / 5 / c))

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Abstract

The problem to grow natural, insulating oxides with good properties on compound semiconductors such as GaAs does not favor the fabrication and application of bipolar devices and even less of MIS devices. Therefore, silicon nitride plays an important role as a masking material for diffusion, implantation, and as dielectric in the manufacture of compound semiconductor devices.

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Authors and Affiliations

  1. Universität Frankfurt/Main, Germany

    Eberhard F. Krimmel

  2. Universität Erlangen, Nürnberg, Germany

    Rudolf Hezel

  3. Gmelin Institute, Frankfurt/Main, Germany

    Uwe Nohl & Rainer Bohrer

Authors
  1. Eberhard F. Krimmel
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  2. Rudolf Hezel
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  3. Uwe Nohl
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  4. Rainer Bohrer
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Editors and Affiliations

  1. Gmelin Institute, Frankfurt/Main, Germany

    Alfred Pebler  & Friedrich Schröder  & 

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© 1991 Springer-Verlag Berlin Heidelberg

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Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Silicon Nitride in Compound Semiconductor Field Effect Transistors. In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_22

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  • DOI: https://doi.org/10.1007/978-3-662-09901-8_22

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