Abstract
Resistors may consist of semiconducting stripes of one type conductivity with contact pads on both ends, monolithically integrated in a semiconductor substrate of the opposite type conductivity. Masks of patterned silicon nitride layers are used to produce resistors by selective diffusion or ion implantation.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Siemens A.-G. (Brit. 1284190 [1969/72]; CA. 77 [1972] No. 94620).
Hitachi Ltd. (Japan. Kokai Tokkyo Koho 59–200455 [1983/84] from C.A. 102 [1985] No. 177539).
Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 59–3962 [1982/84] from C.A. 100 [1984] No. 201839).
Okl Electric Industry Co., Ltd. (Japan. Kokai Tokkyo Koho 58–219759 [1982/83] from C.A. 100 [1984] No. 166429).
Hitachi Ltd. (Japan. Kokai Tokkyo Koho 60–115255 [1985] from C.A. 104 [1986] No. 27435).
Williams, B. D. (Brit. 1385534 [1972/75]; C.A. 83 [1975] No. 20834).
Hitachi Ltd. (Japan. Kokai Tokkyo Koho 57–128054 [1981/82] from C.A. 98 [1983] No. 26316).
Sanyo Electric Co., Ltd.; Tokyo Sanyo Electric Co., Ltd. (Japan. Kokai Tokkyo Koho 59–186358 [1984] from C.A. 102 [1985] No. 158979).
NEC Corp. (Japan. Kokai Tokkyo Koho 60–110151 [1985] from C.A. 103 [1985] No. 188009).
Matsumoto, Y. (Japan. Kokai Tokkyo Koho 63–248157 [1987/88] from C.A. 110 [1989] No. 146235).
Yanase, S. (Japan. Kokai Tokkyo Koho 60–244057 [1985] from C.A. 104 [1986] No. 217613).
Toshiba Corp. (Japan. Kokai Tokkyo Koho 59–111353 [1982/84] from C.A. 101 [1984] No. 220874).
Yau, L D.; Chen, S. O.; Lin, Y. S. (Brit. Appl. 2186116 [1987] from C.A. 107 [1987] No. 227444).
Ledran, J. P.; Guiochon, P. (Fr. 1543297 [1968]; C.A. 72 [1970] No. 16772).]
Plough, C. T.; Hight, R. D. (Brit. Appl. 2128813 [1982/84] from C.A. 101 [1984] No. 64465).
Carlson, H. G.; Brown, G. A.; Harrap, V.; Dugger, D. L; Porebsting, R. J. (NASA-CR-97459 [1968] 160 pp.; Sci. Tech. Aerosp. Rept. 7 [1969] 48 from C.A. 71 [1969] No. 65144).
Posadowski, W. (Thin Solid Films 162 [1988] 111/7).
Toyokura, N.; Ohnishi, T.; Yokoyama, N. (Eur. Appl. 146232 [1985] from C.A. 103 [1985] No. 97408).
Wasa, K.; Honmi[sic], F.; Hayakawa, S. (Japan. Kokai [Tokkyo Koho] 48–70896 [1973] from C.A. 80 [1974] No. 20683).
Wasa, K.; Hosomi[sic], F.; Hayakawa, S. (Japan. [Kokai] Tokkyo Koho 54–28390 [1971/79] from C.A. 92 [1980] No. 32842).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Silicon Nitride in Resistor Fabrication. In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_10
Download citation
DOI: https://doi.org/10.1007/978-3-662-09901-8_10
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-09903-2
Online ISBN: 978-3-662-09901-8
eBook Packages: Springer Book Archive