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Silicon Nitride in Resistor Fabrication

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Si Silicon

Part of the book series: Si. Silicium. Silicon (System-Nr. 15) ((2074,volume S-i / B / 1-5 / 5 / c))

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Abstract

Resistors may consist of semiconducting stripes of one type conductivity with contact pads on both ends, monolithically integrated in a semiconductor substrate of the opposite type conductivity. Masks of patterned silicon nitride layers are used to produce resistors by selective diffusion or ion implantation.

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© 1991 Springer-Verlag Berlin Heidelberg

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Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Silicon Nitride in Resistor Fabrication. In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_10

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  • DOI: https://doi.org/10.1007/978-3-662-09901-8_10

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-09903-2

  • Online ISBN: 978-3-662-09901-8

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