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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 69))

Abstract

Although polishing is an old technology [1, 2, 3], it has become an enabling process for the manufacture of leading-edge semiconductor devices. In the manufacture of such devices, polishing is used to maintain planarity at each step in the process of depositing and photolithographically imaging sequential insulating dielectric and conductive metal layers. Also as noted in the first chapter, CMP is now also employed to remove a bulk film and then stop, as in damascene copper and tungsten polishing. As semiconductor devices become increasingly complex, requiring finer feature geometries and more metallization layers, greater demands are placed on the polishing consumables used in the CMP process to manufacture such devices [4, 5, 6].

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References

  1. T. Izumitani, “Polishing, Lapping and Diamond Grinding of Optical Glasses”, in “Treatise on Material Science and Technology”, 17, eds. M. Tomozawa and R. Doremus, Academic Press, New York, 1979.

    Google Scholar 

  2. L. Cook, J. Non-Crystalline Solids, 120, 152, 1990.

    Article  CAS  Google Scholar 

  3. A. Kaller, Glastech. Ber., 64 (9), 241, 1991.

    CAS  Google Scholar 

  4. S. Murarka, J. Steigerwald and R. Gutmann, “Inlaid Copper Multilevel Interconnections using Planarization by CMP”, MRS Bulletin, 46, June 1993.

    Google Scholar 

  5. L. Shon-Roy, “CMP: Market Trends and Technology”, Solid State Technology, 67, June 2000.

    Google Scholar 

  6. A. Braun, “CMP Battles Low-K, Fundamental Barriers”, Semiconductor International, 66, October 2000.

    Google Scholar 

  7. J.M. Steigerwald, S.P. Murarka and R.J. Gutmann, “Chemical Mechanical Planarization of Microelectronic Materials”, Wiley, 1997.

    Google Scholar 

  8. Polymer Handbook, Second Edition, J. Brandrup and E.H. Immergut, Editors, Wiley and Sons, 1975.

    Google Scholar 

  9. G. Woods, “The ICI Polyurethanes Book”, J. Wiley & Sons, 1990.

    Google Scholar 

  10. G. Oertel, “Polyurethane Handbook”, Second Edition, Hanser, 1994.

    Google Scholar 

  11. M. Szycher, “Handbook of Polyurethanes”, CRC Press, 1999.

    Google Scholar 

  12. R.W. Lenz, “Organic Chemistry of Synthetic High Polymers”, Interscience, 1967.

    Google Scholar 

  13. L.M. Cook, “CMP Consumables II: Pad”, Semiconductors and Semimetals, 63, Chapter 6, 155–181, Academic Press.

    Google Scholar 

  14. H.F. Mark and N.G. Gaylord (editors), “Encylopedia of Polymer Science and Technology”, 8, “Leather-Like Materials”, 210, 1968.

    Google Scholar 

  15. L. Cook, J. Roberts, C. Jenkins and R. Pillai, US Patent 5,489,233, “Polishing Pads and Methods for Their Use”, 1996.

    Google Scholar 

  16. F. Billmeyer, “Textbook of Polymer Science”, J. Wiley, 1972.

    Google Scholar 

  17. J. Aklonis, W. MacKnight and M. Shen, “Introduction to Polymer Viscoelasticity”, Wiley-Interscience, 1972

    Google Scholar 

  18. M. Fury and D. James, “Relationships between Physical Properties and Polishing Performance of Planarization Pads”, SPIE Microelectronic Manufacturing Symposium, Austin, October 16, 1996.

    Google Scholar 

  19. P. Freeman, D. James and L. Markert, “A Study of the Variation of Physical Properties in Random Lots of Urethane Polishing Pads for CMP”, Surface Technology, Vol. 2, Issue 6, June 1996, Rodel Publication.

    Google Scholar 

  20. A. Vishwanathan and D. James, “Next Generation Polishing Pad for Copper Damascene CMP”, Internal Rodel Communication.

    Google Scholar 

  21. D. James, “Control of Polishing Pad Physical Properties and Their Relationship to Polishing Parameters”, CAMP Fifth International Symposium on CMP”, Lake Placid, August 13, 2000.

    Google Scholar 

  22. R. Baker, Electrochemical Soc. Proc., 96–22, 228, 1996.

    Google Scholar 

  23. Machinery’s Handbook, 23rd Edition, 297.

    Google Scholar 

  24. I. Sohn, B. Moudgil, R. Singh and C. Park, “Hydrodynamics of a CMP Process”, Mat. Res. Soc. Symp. Proc., 566, 181, 2000.

    Article  CAS  Google Scholar 

  25. S. Huey, S. Mear, Y. Wang, R. Jin, J. Ceresi, P. Freeman, D. Johnson, T. Vo and S. Eppert, “Technological Breakthrough in Pad Life Improvement and its Impact on CMP CoC”, Tenth Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 54, 1999.

    Google Scholar 

  26. J. Levert, F. Mess, L. Grote, M. Dmytrychenko, L. Cook and S. Danyluk, “Slurry Film Thickness Measurements in Float and Semi-Permeable Polishing Pad Geometries”, Proceedings of the International Tribology Conference, Yokohama, 1995.

    Google Scholar 

  27. M. Weling, C. Drill, W. Parmantie and G. Fawley, Proceedings 1996 CMP-MIC Conference, 40, IMIC, Tampa, 1996.

    Google Scholar 

  28. R. Bajaj, M. Desai, R. Jairath, M. Stell and R. Tolles, “Effect of Polishing Pad Material Properties on CMP Processes”, Mat. Res. Soc. Symp. Proc., 337, 637, 1994.

    Article  CAS  Google Scholar 

  29. R. Baker, Proceedings 1997 CMP-MIC Conference, 339, IMIC, Tampa, 1997.

    Google Scholar 

  30. D. Stein, D. Hetherington, M. Dugger and T. Stout, J. Elect. Mat., 25, 1623, 1996.

    Article  CAS  Google Scholar 

  31. R. Baker and S. Lane, “Pad Conditioning for Next Generation CMP Consumables”, CMP Technology for ULSI Interconnection, SEMI 1998, M1–10.

    Google Scholar 

  32. D. Hetherington, “Tribological Evaluation of Polyurethane CMP Pads”, CMP Technology for ULSI Interconnection, SEMI 1998, L1–19.

    Google Scholar 

  33. M.R. Oliver, R.E. Schmidt and M. Robinson, “CMP Pad Surface Roughness and CMP Removal Rate”, ECS Meeting, Phoenix, October 2000.

    Google Scholar 

  34. D. Goetz, Mat. Res. Soc. Symp. Proc. 566, 51, (2000)

    Article  CAS  Google Scholar 

  35. S. Sivaram, H. Bath, R. Leggett, A. Maury, K. Monnig and R. Tolles, Solid State Technology, 87, May 1992.

    Google Scholar 

  36. I. Ali and S. Roy, “Pad Conditioning in Interlayer Dielectric CMP,” Solid State Technology, 185, June 1997.

    Google Scholar 

  37. R. Kolenkow and R. Nagahara, “Chemical Mechanical Wafer Polishing and Planarization in Batch Systems”, Solid State Technology, 112, June 1992.

    Google Scholar 

  38. I. Ali, S. Roy and G. Shinn, “CMP of Interlayer Dielectric: A Review”, Solid State Technology, 63, October 1994.

    Google Scholar 

  39. R. Jairath, M. Desai, M. Stell, R. Tolles and D. Scherber-Brewer, “Consumables for the CMP of Dielectrics and Conductors”, Mat. Res. Soc. Symp. Proc., 337, 121, 1994.

    Article  Google Scholar 

  40. R. DeJule, “CMP Challenges below a Quarter Micron”, Semiconductor International, 54, November 1997.

    Google Scholar 

  41. J. Grillaert, M. Meurix, E. Vrancken, N. Heylen, K. Devriendt, W. Fyen and M. Heyns, “Modeling the Influence of Pad Bending on the Planarization Performance during CMP”, Mat. Res. Soc. Symp. Proc., 566, 45, 2000.

    Article  CAS  Google Scholar 

  42. S. Pangrle, I. Salugsugan, A. Dangca, M. Segovia, D.M. Schonauer and D. Erb, “Polishing Performance of the Rodel EX2000 Pad”, Proceedings 1996 CMPMIC Conference, 47, IMIC, Tampa, 1996.

    Google Scholar 

  43. J. Grillaert, H. Meynen, J. Waeterloos, B. Coenegrachts and L. Vandenhove, “Minimizing Within Die Non-Uniformity in CMP by Optimizing Polishing Parameters and Consumables”, Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, MRS, 525, 1996.

    Google Scholar 

  44. J. Grillaert, M. Meurix, E. Vrancken, N. Heylen, K. Devriendt, W. Fyen and M. Heyns, Mat. Res. Soc. Symp. Proc., 566, 45, 2000.

    Article  CAS  Google Scholar 

  45. J. Warnock, J. Elecrochem. Soc., 138 (8), 2398, 1991.

    Article  Google Scholar 

  46. G. Nanz and L. Camilletti, IEEE Trans. on Semi. Manuf., 8 (4), November 1995.

    Google Scholar 

  47. L. Cook, J. Wang, D. James and A. Sethuraman, Semiconductor International, 141, November 1995.

    Google Scholar 

  48. P. Renteln and J. Coniff, Mat. Res. Soc. Symp. Proc. 337, 105, 1994.

    Article  CAS  Google Scholar 

  49. T. Yu, C. Yu and M. Orlowski, “A Statistical Polishing Pad Model for CMP”, Tech. Dig. 1993 IEDM, 865, 1993.

    Google Scholar 

  50. J. Grillaert, M. Meuris, N. Heylen, K. Devriendt, E. Vrancken and M. Heyns, Proceedings 1998 CMP-MIC Conference, 79, IMIC, Tampa, 1998.

    Google Scholar 

  51. F. Preston, J. Soc. Glass Tech., 11, 214, 1927.

    CAS  Google Scholar 

  52. V. Sachan, N. Chechik, P. Lao, D. James and L. Cook, Proceedings 1998 CMPMIC Conference, 401, IMIC, Tampa, 1998.

    Google Scholar 

  53. J. Steigerwald, R. Zirpoli, S. Murarka, D. Price and R. Gutmann, J. Electrochem. Soc., 141 (10), 2842, 1994.

    Article  CAS  Google Scholar 

  54. G. Wu and L. Cook, “Mechanism of Copper Damascene CMP”, Proceedings 1998 CMP-MIC Conference, 150, IMIC, Tampa, 1998.

    Google Scholar 

  55. J. Grillaert, E. Vrancken, W. Fyen, M. Meuris and M. Heyns, “The Basic Mechanism of CMP of Cu and TaN”, IMEC 1999.

    Google Scholar 

  56. J. Pan, P. Li, K. Wijekoon, S. Tsai and F. Redeker, “Copper CMP Integration and Time Dependent Pattern Effect”, Proceedings 1999 International Interconnect Technology Conference, 164, 1999.

    Google Scholar 

  57. L. Yang, “Modeling CMP for Copper Dual Damascene Interconnects”, Solid State Technology, 111, June 2000.

    Google Scholar 

  58. V. Nguyen, P. Van der Velden, R. Daamen, H. Van Kranenburg and P. Woerlee, “Modeling of Dishing for Metal CMP”, 46th Annual IEEE International Electron Devices Meeting (IEDM), San Francisco, December 11, 2000.

    Google Scholar 

  59. S. Sivaram, H. Bath, E. Lee, R. Legett and R. Tolles, Advanced Metallization for ULSI Applications in 1991, MRS, Pittsburgh, 511, 1992.

    Google Scholar 

  60. P. Renteln and J. Coniff, Proceedings of the MRS 1994 Spring Meeting, 337, 105, 1994.

    Google Scholar 

  61. A. Krishnashree, “Evaluation and Characterization of Polyurethane CMP Polishing Pads”, Ph.D. Thesis, Clarkson University, Potsdam, NY, 1998.

    Google Scholar 

  62. K. Torii, “Polishing Device having a Pad which has Grooves and Holes”, U.S. Patent 5,725, 420, March 1998.

    Google Scholar 

  63. T. Zhang, “Report on Thicker OXP3000TM Pad Evaluation”, Rodel Internal Communication, 2000.

    Google Scholar 

  64. T. Zhang, “Effects of Polishing Down-force and Sub-Pad on Planarization Performance of OXP3000TM Pad”, Rodel Internal Communication, 1998.

    Google Scholar 

  65. M. Oliver, “Copper CMP with Reactive Liquid Technology”, CAMP Fifth International Symposium on CMP”, Lake Placid, August 13, 2000.

    Google Scholar 

  66. Y. Shimamura and Y. Kamigata, “Newly Developed Abrasive Free Slurry for Copper Interconnections”, CAMP Fifth International Symposium on CMP”, Lake Placid, August 13, 2000.

    Google Scholar 

  67. J. Amanokura, Y. Shimamura, H. Habiro, Y. Kamigata, H. Suzuki, and M. Hanazono, “Advanced Cu CMP Slurry for Sub-micron Generation”, CAMP Sixth International Symposium on CMP”, Lake Placid, August 12, 2001.

    Google Scholar 

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James, D.B. (2004). CMP Polishing Pads. In: Oliver, M.R. (eds) Chemical-Mechanical Planarization of Semiconductor Materials. Springer Series in Materials Science, vol 69. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-06234-0_6

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  • DOI: https://doi.org/10.1007/978-3-662-06234-0_6

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