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Active-Matrix Liquid-Crystal Displays

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Technology and Applications of Amorphous Silicon

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 37))

Abstract

The active-matrix liquid-crystal display (AMLCD) is a flat-panel display in which the display medium is liquid crystal and each picture element (pixel) is driven by such active devices as diodes or transistors. These active devices are arranged in rows and columns on a glass substrate to control each pixel, and hence the name of active matrix. Before the AMLCDs were introduced, liquid-crystal displays were operated on a basis of simple matrix or passive-matrix. Passive-matrix liquid-crystal displays feature flatness, lightweight, and low-power consumption. Due to these features, they have been first installed in such devices as wrist watches or calculators. Then, their application fields have expanded to pocket TVs, word processors, and factory automation machines. There was a constant demand for larger sizes and higher resolutions.

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References

  1. P. K. Weimer: Proc. IRE-AIEE Solid State Device Res. Conf. (Stanford, California), 1961.

    Google Scholar 

  2. P. K. Weimer: Thin film transistors. In Field Effect Transistors, edited by J. T. Wallmark and H. Johnson. Prentice Hall (New Jersey), 1966.

    Google Scholar 

  3. B. J. Lechner, F. J. Marlowe, E. O. Nester and J. Tults: Liquid crystal matrix displays. Proc. IEEE, 59, 1566–1579, 1971.

    Article  Google Scholar 

  4. G. H. Heilmeier, L. A. Zanoni and L. A. Barton: Dynamic scattering: a new electrooptic effect in certain classes of nematic liquid crystals. Proc. IEEE, 56, 1162–1171, 1968.

    Article  Google Scholar 

  5. T. P. Brody, J. A. Asars and G. D. Dixon: A 6× 6 inch 20 lines-per-inch liquid-crystal display panel. IEEE Trans. Electron Devices, ED-20, 995–1001, 1973.

    Article  Google Scholar 

  6. M. Schadt and W. Helfrich: Voltage-dependent optical activity of a twisted nematic liquid crystal. Applied Physics Letters, 18, 127–128, 1971.

    Article  Google Scholar 

  7. P. G. LeComber, W. E. Spear and A. Gaith: Amorphous-silicon field-effect device and possible application. Electronics Letters, 15, 179–181, 1979.

    Article  Google Scholar 

  8. T. Tsukada: State-of-the-art of a-Si TFT/LCD. Transaction of the Institute of Electronics, Information and Communication Engineers (Japan), J76-C-II, 177–183, 1993.

    Google Scholar 

  9. 2.9 M. Ohta, M. Oh-e, K. Kondo: Development of Super-TFT-LCDs with in-plane-switching display mode, Proc. Int. Display Res. Conf., S30–2, 707–710, 1995 (Hamamatsu).

    Google Scholar 

  10. Y. Kaneko, A. Sasano, and T. Tsukada: Analysis and design of a-Si TFT/LCD panels with a pixel model. IEEE Transaction Electron Devices, ED-36, 2953–2958, 1989.

    Google Scholar 

  11. T. Tsukada (1993). Development of aluminum gate thin-film transistors based on aluminum oxide insulators. In Amorphous Insulating Thin Films. Material Research Society Symposium Proceedings (Boston, 1992), edited by J. Kanicki et al., 371–382. Pittsburgh: Material Research Society.

    Google Scholar 

  12. F. Morin: Electrooptical performance of a TFT-addressed TNLC panel. Proc. 3rd International Display Research Conference (Kobe, 1983). 412–414, California: SID, 1983.

    Google Scholar 

  13. Y. Kaneko, Y. Tanaka, N. Kabuto, and T. Tsukada: A new address scheme to improve the display quality of a-Si TFT/LCD panel. IEEE Transaction Electron Devices, ED-36, 2949–2952, 1989.

    Google Scholar 

  14. Y. Nanno, Y. Mino, E. Takeda, and S. Nagata: Characterization of sticking effects of TFT-LCD. In Digest of Technical Papers of the Society for Information Display International Symposium (Las Vegas, 1990), 404–407, California: SID, 1990.

    Google Scholar 

  15. Y. Kanemori, M. Katayama, K. Nakazawa, H. Kato, K. Yano, Y. Fukuoka, et al.: 10.4-in-diagonal color TFT-LCDs without residual images. In Digest of Technical Papers of the Society for Information Display International Symposium (Las Vegas, 1990), 408–411, California: SID, 1990.

    Google Scholar 

  16. Y. Nasu, S. Kawai, S. Kisumi, K. Oki, and K. Hori: Color LCD for character and TV display addressed by self-aligned a-Si:H TFT. In Digest of Technical Papers of the Society for Information Display International Symposium (San Diego, 1986), 289–292, California: SID, 1986.

    Google Scholar 

  17. K. Asama, T. Kodama, S. Kawai, Y. Nasu, and S. Yanagisawa: A self-alignment processed a-Si TFT matrix circuit for LCD SID panels. In Digest of Technical Papers of the Society for Information Display International Symposium (Philadelphia, 1983), 144–145, California: SID, 1983.

    Google Scholar 

  18. H. Yamamoto, H. Matsumaru, K. Tsutsui, N. Konishi, M. Nakatani, K. Shira-hashi, A. Sasano, and T. Tsukada: A new a-Si TFT with Al2O3/SiN double-layered gate insulator for 10.4-inch diagonal multicolor display. In Technical Digest of the International Electron Devices Meeting (San Francisco, 1990), 851–854, New York: IEEE, 1990.

    Chapter  Google Scholar 

  19. T. Tsukada: Scaling theory of liquid-crystal displays addressed by thin-film transistors, IEEE Tr. Electron Devices, 45, 387–393, 1998.

    Article  Google Scholar 

  20. R. H. Dennard, F. H. Gensslen, H-N. Yu, V. L. Rideout, E. Bassous, and A. R. LeBlanc: Design of ion-implanted MOSFET’s with very small physical dimensions, IEEE J. Solid-State Circuits, SC-9, 256–268, 1974.

    Article  Google Scholar 

  21. W. H. Dumbaugh, P. L. Bocko: Substrate glasses for flat-panel displays. In Digest of Technical Papers of the Society for Information Display International Symposium (Las Vegas, 1990), 70–72, California: SID, 1990.

    Google Scholar 

  22. P. K. Weimer: An evaporated thin-film triode, In Proceedings of the IRE-AIEE Solid State Device Research Conference (Stanford, California, 1961), 1961.

    Google Scholar 

  23. P. K. Weimer: The TFT — a new thin-film transistor, Proc. IRE, 50, 1462–1469, 1962.

    Article  Google Scholar 

  24. T. P. Brody, J. A. Asars, and G. D. Dixon: A 6x6 inch 20 lines-per-inch liquid-crystal display panel, IEEE Trans. Electron Devices, ED-20, 995–1001, 1973.

    Article  Google Scholar 

  25. F-C. Luo, W. A. Hester, and T. P. Brody: Alphanumeric and video performance of a 6′× 6′ 30 lines-per-inch thin-film transistor-liquid crystal display panel, In Digest of Technical Papers of the Society for Information Display International Symposium (San Francisco, 1978). California: SID, 1978.

    Google Scholar 

  26. P. G. LeComber, W. E. Spear, and A. Gaith: Amorphous-silicon field-effect device and possible application, Electronics Letters, 15, 179–181, 1979.

    Article  Google Scholar 

  27. A. J. Snell, K. D. Mackenzie, W. E. Spear, and P. G. LeComber: Application of amorphous silicon field effect transistors in addressable liquid crystal display panels, Applied Physics, 24, 357–362, 1981.

    Article  Google Scholar 

  28. W. E. Spear and P. G. LeComber: Investigation of the localized state distribution in amorphous Sifilms, Journal of Non-Crystalline Solids, 8–10, 727–738, 1972.

    Article  Google Scholar 

  29. Y. Okubo, T. Nakagiri, Y. Osada, M. Sugata, N. Kitahara, and K. Hatanaka: Large-scale LCDs addressed by a-Si TFT array, In Digest of Technical Papers of the Society for Information Display International Symposium (San Diego, 1982), California: SID, 1982.

    Google Scholar 

  30. S. M. Sze: Physics of Semiconductor Devices, pp. 567–573. New York: Wiley-Interscience, 1969.

    Google Scholar 

  31. M. J. Powell: Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors, Applied Physics Letters, 43, 597–599, 1983.

    Article  Google Scholar 

  32. N. Lustig and J. Kanicki: Gate dielectric and contact effects in hydrogenated amorphous silicon-silicon nitride thin-film transistors, Journal of Applied Physics, 65, 3951–3955, 1989.

    Article  Google Scholar 

  33. M. Ohta, M. Tsumura, J. Ohida, J. Ohwada, and K. Suzuki: Active matrix network simulator considering non-linear C-V characteristics of TFTs intrinsic capacitances, In Proceedings of the 12th International Display Research Conference (Hiroshima, 1992), 431–434. California: SID, 1992.

    Google Scholar 

  34. M. Nakazato and T. Higuchi: Capacitance-voltage characteristics of a-Si TFTs, In Proceedings of the 12th International Display Research Conference (Hiroshima, 1992), 439–442, California: SID, 1992.

    Google Scholar 

  35. D. E. Carlson and C. R. Wronski: Amorphous silicon solar cell, Applied Physics Letters, 28, 671–673, 1976.

    Article  Google Scholar 

  36. H. Yamamoto, C. Baji, H. Matsumaru, Y. Tanaka, C. Seki, C. Tsukada, et al.: High speed contact type linear sensor array using a-Si pin diodes, In Extended Abstracts of the 15th Conference on Solid State Devices and Materials (Tokyo, 1983), 205–208, The Japan Society of Applied Physics, 1983.

    Google Scholar 

  37. I. Shimizu, T. Komatsu, K. Saito, and E. Inoue: A-Si thin film as a photoreceptor for electrophotography, Journal of Non-Crystalline Solids, 35 & 36, 773–778, 1980.

    Article  Google Scholar 

  38. Y. Kaneko, A. Sasano, T. Tsukada, R. Oritsuki, and K. Suzuki: Improved reliability in amorphous silicon thin-film transistors, In Extended Abstracts of the 18th International Conference on Solid State Devices and Materials (Tokyo, 1986). 669–702. The Japan Society of Applied Physics, 1986.

    Google Scholar 

  39. M. Katayama, H. Morimoto, S. Yasuda, T. Takamatu, H. Tanaka, M. Hi-jikigawa: High-resolution full-color LCDs addressed by double-layered gate-insulator a-Si TFTs, In Digest of Technical Papers of the Society for Information Display International Symposium (Anaheim, 1988), 310–313, California: SID, 1988.

    Google Scholar 

  40. D. L. Staebler and C. R. Wronski: Reversible conductivity changes in discharge-produced amorphous Si, Applied Physics Letters, 31, 292–294, 1977.

    Article  Google Scholar 

  41. R. A. Street: Hydrogenated Amorphous Silicon, p. 216. Cambridge: Cambridge University Press, 1991.

    Book  Google Scholar 

  42. R. Oritsuki, T. Horii, A. Sasano, K. Tsutsui, T. Koizumi, Y. Kaneko, and T. Tsukada: Threshold voltage shift of a-Si TFTs during pulse operation, In Extended Abstracts of the International Conference on Solid State Devices and Materials (Yokohama, 1991), 635–637. The Japan Society of Applied Physics, 1991.

    Google Scholar 

  43. T. Toyabe, H. Masuda, Y. Kaneko, A. Sasano, H. Fukushima, and T. Tsukada: A two-dimensional numerical model of amorphous silicon thin-film transistors, In Technical Digest of the International Electron Devices Meeting (Washington, D. C, 1986), 575–578, IEEE, 1986.

    Google Scholar 

  44. 2.44 S. Morozumi, T. Ohta, R. Araki, T. Sonehara, K. Kubota, Y. Ono, T. Nakazawa, H. Ohara: A 250 × 240 element LCD addressed by lateral MIM, Proc. Intn’l Display Res. Conf., 10–3, 404–407, 1983 (Kobe).

    Google Scholar 

  45. R. A. Gibson, P. G. LeComber, and W. E. Spear: The characteristics of high current amorphous silicon diodes, Appi. Phys., 21, 307–311, 1980.

    Article  Google Scholar 

  46. N. Szydlo, E. Chartier, N. Proust, J. Magarino, and D. Kaplan: High current post-hydrogenated chemical vapor deposited amorphous silicon p-i-n diodes, Appl. Phys. Lett., 40, 988–990, 1982.

    Article  Google Scholar 

  47. D. G. Ast: Materials Limitations of amorphous-Si:H transistors, IEEE Tr. Electron Devices, ED-30, 532–539, 1983.

    Article  Google Scholar 

  48. N. Szydlo, E. Chartier, J. N. Perbet, N. Proust, J. Magarino, and M. Hareng: Integrated matrix-addressed LCD using amorphous-silicon back-to-back diodes, Proc. SID (Society for Information Display), 265–268, 1984.

    Google Scholar 

  49. Y. Goto, T. Ogawa, S. Sawada and S. Sugimori: Fluorinated liquid crystals for active matrix displays, Mol. Cryst. Liq. Cryst., 209, 1–7, 1991.

    Article  Google Scholar 

  50. V. Reiffenrath, J. Krause, H. J. Plach and G. Weber: New liquid-crystalline compounds with negative dielectric anisotropy, Liq. Cryst., 5, 159–170, 1989.

    Article  Google Scholar 

  51. M. Schadt, M. Petrzilka, P. R. Gerber and A. Villiger: Polar alkenyls: physical properties and correlations with molecular structure of new nematic liquid crystals, Mol. Cryst. Liq. Cryst., 122, 241–260, 1985.

    Article  Google Scholar 

  52. D. Lippens, J. P. Parneix and A. Chapoton, Journal de Physique, 38, 1465, 1977.

    Article  Google Scholar 

  53. W. H. de Jeu, W. A. P. Claassen and A. M. J. Spruijt: The determination of the elastic constants of nematic liquid crystals. Mol.Cryst. and Liq. Cryst., 37, 269–280, 1976.

    Article  Google Scholar 

  54. M. Schadt and W. Helfrich: Voltage-dependent optical activity of a twisted nematic liquid crystal, Applied Physics Letters, 18, 127–128, 1971.

    Article  Google Scholar 

  55. E. Jakeman and E. P. Raynes: Electro-optic response times in liquid crystals, Physics Letters, 39A, 69–70, 1972.

    Google Scholar 

  56. K. Katoh, S. Imagi and N. Kobayashi: Active-matrix-addressed color LCDs for avionic application. In Digest of Technical Papers of the Society for Information Display International Symposium (Anaheim, 1988), 238–241. California: SID, 1988.

    Google Scholar 

  57. C. H. Gooch and H. A. Tarry: The optical properties of twisted nematic liquid crystal structures with twist angles < 90°, Journal of Physics D: Applied Physics, 8, 1575–1584, 1975.

    Article  Google Scholar 

  58. C. H. Gooch and H. A. Tarry: Optical characteristics of twisted nematic liquid-crystal films, Electronics Letters, 10, 2–4, 1974.

    Article  Google Scholar 

  59. R. M. A. Azzam and N. M. Bashara: Simplified approach to the propagation of polarized light in anisotropic media-application to liquid crystals, Journal of the Optical Society of America, 62, 1252–1257, 1972.

    Article  Google Scholar 

  60. F. Funada, M. Okada, N. Kimura and K. Awane: Selection and optimizing of liquid crystal display modes for the full color active-matrix LCDs, Journal of the Institute of Television Engineers, 42, 1029–1034, 1988 (In Japanese).

    Article  Google Scholar 

  61. D. W. Berreman: Optics in smoothly varying anisotropic planar structures: application to liquid-crystal twist cells, Journal of the Optical Society of America, 63, 1374–1380, 1973.

    Article  Google Scholar 

  62. C. C. Yang: Two-domain twisted nematic and tilted homeotropic liquid crystal displays for active matrix applications. In Proc. International Display Research Conference (San Diego, 1991), 68–72, California: SID, 1991.

    Google Scholar 

  63. Y. Koike, T. Kamada, K. Okamoto, N. Ohashi, I. Tornita and M. Okabe: A full-color TFT-LCD with a domain-divided twisted-nematic structure. In Digest of Technical Papers of the Society for Information Display International Symposium (Boston, 1992), 798–801, California: SID, 1992.

    Google Scholar 

  64. 2.64 R. Kiefer, C. Weber, F. Windscheid, G. Baur: In-plane switching of nematic liquid crystals, Proc. Intn’l Display Res. Conf., P 2–30, 547–550, 1992 (Hiroshima).

    Google Scholar 

  65. K. Ohmuro, S. Kataoka, T. Sasaki, Y. Koike: Development of super-high-image-quality vertical-alignment-mode LCD, Digest Tech. Papers Society for Information Display Intn’l Symposium, 845–848, 1997.

    Google Scholar 

  66. R. A. Soref: Transverse field effects in nematic liquid crystals, Appl. Phys. Lett., 22, 165–166, 1973.

    Article  Google Scholar 

  67. R. A. Soref: Field effects in nematic liquid crystals obtained with interdigital electrodes, J. Appl. Phys., 45, 5466–5468, 1974.

    Article  Google Scholar 

  68. 2.68 M. Ohta, M. Oh-e, K. Kondo: Development of Super-TFT-LCDs with in-plane switching display mode, Proc. Intn’l Display Res. Conf., S. 30–2, 707–710, 1995 (Hamamatsu).

    Google Scholar 

  69. M. Ohe and K. Kondo: Electro-optical characteristics and switching behavior of the in-plane switching mode, Appl. Phys. Lett., 67, 3895–3897, 1995.

    Article  Google Scholar 

  70. P. M. Alt and P. Pleshko: Scanning limitations of liquid-crystal displays, IEEE Transactions on Electron Devices, ED-21, 146–155, 1979.

    Google Scholar 

  71. J. Nehring, A. R. Kmetz: Ultimate limits for matrix addressing of rms-responding liquid-crystal displays, IEEE Transactions on Electron Devices, ED-26, 795–802, 1979.

    Article  Google Scholar 

  72. T. J. Scheffer and J. Nehring: A new, highly multiplexable liquid crystal display, Applied Physics Letters, 45, 1021–1023, 1984.

    Article  Google Scholar 

  73. F. Leenhouts and M. Schadt: Electro-optics of supertwist displays; dependence on liquid crystal material parameters, In Proc. 6th International Display Research Conference (Tokyo, 1986), 388–391. California: SID, Tokyo: ITE, 1986.

    Google Scholar 

  74. K. Kinugawa, Y. Kondo, M. Kanasaki, H. Kawakami and E. Kaneko: 640×480 pixel LCD using highly twisted birefringence effect with low pretilt angle, In Digest of Technical Papers of the Society for Informatio Display International Symposium (San Diego, 1986), pp. 122–125. California: SID, 1986.

    Google Scholar 

  75. P. A. Breddels and H. A. van Sprang: An analytical expression for the optical threshold in highly twisted nematic systems with nonzero tilt angles at the boundaries, Journal of Applied Physics, 58, 2162–2166, 1985.

    Article  Google Scholar 

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  1. Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo, 185-8601, Japan

    Toshihisa Tsukada

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  1. Xerox PARC, 3333 Coyote Hill Road, 94304, Palo Alto, CA, USA

    Robert A. Street

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Tsukada, T. (2000). Active-Matrix Liquid-Crystal Displays. In: Street, R.A. (eds) Technology and Applications of Amorphous Silicon. Springer Series in Materials Science, vol 37. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04141-3_2

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  • DOI: https://doi.org/10.1007/978-3-662-04141-3_2

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