Abstract
It is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed in some detail. Two important points are stressed: (i) a-Si device arrays can be produced by well-established photolithographic techniques, and (ii) satisfactory operation at applied voltages below 15VV is possible. Small experimental 7×5 transistor panels have been investigated and it is shown that with the present design up to 250-way multiplexing could be achieved. The reproducibility of FET characteristics is good and in tests so far no change has been observed after more than 109 switching operations.
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Snell, A.J., Mackenzie, K.D., Spear, W.E. et al. Application of amorphous silicon field effect transistors in addressable liquid crystal display panels. Appl. Phys. 24, 357–362 (1981). https://doi.org/10.1007/BF00899734
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DOI: https://doi.org/10.1007/BF00899734