Abstract
Silicon heterojunction solar cells have been fabricated using polycrystalline and crystalline SiC films as window material. SiC films are grown on Si substrates by chemical vapor deposition technique. These films are in situ doped using phosphine and spin on dopant after growth. Typical results of the n-βSiC/p-Si heterojunction solar cells are Voc = 492 raV; Jsc = 22.37 mA/cm2; FF = 0.70; η = 7.70% at AM1 solar simulated radiation. The possible causes for this low efficiency are discussed.
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© 1992 Springer-Verlag Berlin Heidelberg
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Solangi, A., Chaudhry, M.I. (1992). Fabrication and Electrical Properties of β-SiC/Si and Poly-SiC/Si Solar Cells. In: Yang, C.Y., Rahman, M.M., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide IV. Springer Proceedings in Physics, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84804-9_53
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DOI: https://doi.org/10.1007/978-3-642-84804-9_53
Publisher Name: Springer, Berlin, Heidelberg
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