Abstract
The thermodynamic model we developed previously for ruby or YAG laser annealing of silicon has been applied to evaluate the melt depths in the same semiconductor under U.V. pulsed laser irradiation.
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© 1984 Springer-Verlag Berlin Heidelberg
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Unamuno, S., Toulemonde, M., Siffert, P. (1984). Melting Model for UV Lasers. In: Bäuerle, D. (eds) Laser Processing and Diagnostics. Springer Series in Chemical Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82381-7_6
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DOI: https://doi.org/10.1007/978-3-642-82381-7_6
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