Abstract
First attempts of microwave transistors realized by ion-implantation were made on a 2N 918 structure. The selection of doping impurities was accomplished after a study of the implantation profils obtained by a rapid process developped in our Laboratory. Base-diffused, emitter-implanted transistor were realized. The gain is about 50 and the f T is similar to that of the diffused transistor. Studier are in progress on small dimension transistors.
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© 1971 Springer-Verlag, Berlin · Heidelberg
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Morizot, M., Dubee, A., Cornette, A. (1971). Microwave Transistors Fabricated by Ion-Implantation Selection of Doping Impurities and Prototype Realization. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_47
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DOI: https://doi.org/10.1007/978-3-642-80660-5_47
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-80662-9
Online ISBN: 978-3-642-80660-5
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