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Ion Implantation in Semiconductors

Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28, 1971, Garmisch-Partenkirchen, Bavaria, Germany

  • Editors
  • Ingolf Ruge
  • Jürgen Graul

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Disorder in Ion Implanted Silicon

  3. Implantation of Boron and Phosphorus into Silicon

  4. Implantation into Compound Semiconductors

    1. F. L. Vook, S. T. Picraux
      Pages 141-150
    2. George W. Arnold
      Pages 151-156
    3. T. Itoh, Y. Kushiro
      Pages 168-173
    4. P. N. Favennec
      Pages 174-181
    5. J. L. Merz, L. C. Feldman, D. W. Mingay, W. M. Augustyniak
      Pages 182-192
    6. J. D. Haskell, W. A. Grant, G. A. Stephens, J. L. Whitton
      Pages 193-198
    7. A. W. Tinsley, W. A. Grant, G. Carter, M. J. Nobes
      Pages 199-204
  5. Compound and Amorphous Semiconductors

    1. B. R. Pruniaux, J. C. North, G. L. Miller
      Pages 212-221
    2. K. R. Faulkner, A. Todkill
      Pages 222-227
    3. G. Langguth, E. Lang, O. Meyer
      Pages 228-234
    4. Y. Shiraki, T. Shimada, K. F. Komatsubara
      Pages 235-240
    5. J. A. Olley, A. D. Yoffe
      Pages 248-254
    6. B. L. Crowder, J. E. Smith Jr., M. H. Brodsky, M. I. Nathan
      Pages 255-261
    7. D. H. Lee, O. J. Marsh, R. R. Hart
      Pages 262-266
  6. Techniques and Germanium

    1. J. W. Mayer, I. V. Mitchell, M.-A. Nicolet
      Pages 274-286
    2. F. H. Eisen
      Pages 287-296
    3. R. L. Meek, W. M. Gibson, J. P. F. Sellschop
      Pages 297-298
    4. H. Herzer, S. Kalbitzer
      Pages 307-314
  7. Devices 1

    1. H. G. Dill, T. N. Toombs, L. O. Bauer
      Pages 315-328
    2. Y. Ohmura, T. Abe, S. Mimura, M. Konaka, M. Kanazawa, H. Ohtsubo et al.
      Pages 335-339
    3. A. Bobenrieth, Pham Ngu Tung, C. Arnodo
      Pages 340-344
    4. K. H. Nicholas, R. A. Ford
      Pages 357-361

About these proceedings

Introduction

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

Keywords

development implant implantat implantation production research stress

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-80660-5
  • Copyright Information Springer-Verlag Berlin Heidelberg 1971
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-80662-9
  • Online ISBN 978-3-642-80660-5
  • Buy this book on publisher's site